CGD65C025SP2 vs CGD65A055S2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng CGD65C025SP2 sa pamamagitan ng Cambridge GaN Devices at CGD65A055S2 sa pamamagitan ng Cambridge GaN Devices. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Cambridge GaN Devices
CGD65C025SP2 CGD65C025SP2 - 650V 25mΩ GaN HEMT 60A | Cambridge GaN Devices

CGD65C025SP2 - 650V 25mΩ GaN HEMT 60A | Cambridge GaN Devices

CGD65C025SP2 ✓ Nakahanda
Cambridge GaN Devices
CGD65A055S2 CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices

CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices

CGD65A055S2 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro CGD65C025SP2 CGD65A055S2
Brand Cambridge GaN Devices Cambridge GaN Devices
Kategorya MOSFETs Transistors
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Cambridge GaN Devices (CGD) Cambridge GaN Devices
Part Number CGD65C025SP2 —
Uri ng Transistor N-Channel GaN HEMT (enhancement-mode, normally-off) —
Gate Technology ICeGaN® (no negative gate supply required) ICeGaN™ (standard-driver compatible)
Drain-Source Voltage (V_DS max) 650 V —
Continuous Drain Current (I_D) 60 A —
On-Resistance (R_DS(on)) 25 mΩ (typical) —
Packhaging BHDFN-9-1 (surface-mount, wettable flank) 16-pin DFN 8x8 mm
Uri ng Pagpapasok Surface Mount Surface Mount
Configuration Single N-Channel —
Operating Mode Enhancement mode (normally-off) Enhancement-mode (normally-off)
Material GaN-on-Si (Gallium Nitride on Silicon) —
Switching Frequency Suitability High frequency (fast turn-on, easy paralleling) —
Datasheet Status Preliminary (May 2024) —
Tindminan RoHS [DATA_NEEDED: RoHS compliance status] Compliant (lead-free)
AEC-Q100 Qualification unknown —
Technology — GaN-on-Si HEMT (enhancement mode)
Drain-to-Source Voltage (VDS) — 650 V
On-Resistance (RDS(on)) — 55 mΩ
Patuloy na Drain Current (TC=25°C) — 27 A
Current Sense Pin — Yes (integrated CS output)
Integrated Protection Circuit — NL³ (non-linear low-loss)
Reverse Recovery Charge (Qrr) — 0 nC (zero, typical for GaN)
Channel Type — N-Channel
Polarity — Single FET

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