CGD65C025SP2 vs CGD65A055S2 Karşılaştırma
Ayrıntılı yan yana karşılaştırma CGD65C025SP2 tarafından Cambridge GaN Devices ve CGD65A055S2 tarafından Cambridge GaN DevicesAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Cambridge GaN Devices
CGD65C025SP2 - 650V 25mΩ GaN HEMT 60A | Cambridge GaN Devices
CGD65C025SP2 ✓ AktifCambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ AktifÖzellik Karşılaştırması
| Parametre | CGD65C025SP2 | CGD65A055S2 |
|---|---|---|
| Marka | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategori | MOSFETs | Transistors |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Cambridge GaN Devices (CGD) | Cambridge GaN Devices |
| Part Number | CGD65C025SP2 | — |
| Transistor Türü | N-Channel GaN HEMT (enhancement-mode, normally-off) | — |
| Gate Technology | ICeGaN® (no negative gate supply required) | ICeGaN™ (standard-driver compatible) |
| Drain-Source Voltage (V_DS max) | 650 V | — |
| Continuous Drain Current (I_D) | 60 A | — |
| On-Resistance (R_DS(on)) | 25 mΩ (typical) | — |
| Paket | BHDFN-9-1 (surface-mount, wettable flank) | 16-pin DFN 8x8 mm |
| Montaj Türü | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Operating Mode | Enhancement mode (normally-off) | Enhancement-mode (normally-off) |
| Material | GaN-on-Si (Gallium Nitride on Silicon) | — |
| Switching Frequency Suitability | High frequency (fast turn-on, easy paralleling) | — |
| Datasheet Status | Preliminary (May 2024) | — |
| RoHS Durumu | [DATA_NEEDED: RoHS compliance status] | Compliant (lead-free) |
| AEC-Q100 Qualification | unknown | — |
| Technology | — | GaN-on-Si HEMT (enhancement mode) |
| Drain-to-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 55 mΩ |
| Devamlı Akım Akışı (TC=25°C) | — | 27 A |
| Current Sense Pin | — | Yes (integrated CS output) |
| Integrated Protection Circuit | — | NL³ (non-linear low-loss) |
| Reverse Recovery Charge (Qrr) | — | 0 nC (zero, typical for GaN) |
| Channel Type | — | N-Channel |
| Polarity | — | Single FET |