FDMC89521L vs DMN3190LDW-7 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng FDMC89521L sa pamamagitan ng onsemi at DMN3190LDW-7 sa pamamagitan ng Diodes Incorporated. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | FDMC89521L | DMN3190LDW-7 |
|---|---|---|
| Brand | onsemi | Diodes Incorporated |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | onsemi (Fairchild Semiconductor) | — |
| FET Type | 2 × N-Channel (Dual) | Dual N-Channel Enhancement Mode |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ TA=25C | 8.2 A | — |
| Continuous Drain Current (Id) @ TC=25C | [DATA_NEEDED: TC-rated Id] | — |
| On-Resistance Rds(on) @ Vgs=10V | 17 mΩ | — |
| Gate-Source Voltage (Vgs) | ±20 V | — |
| Power Dissipation (TA=25C) | 1.9 W | — |
| Power Dissipation (TC=25C) | 16 W | — |
| Technology | POWERTRENCH shielded-gate trench MOSFET | Silicon N-Channel MOSFET |
| Packhaging | 8-Power33 (MLP-8 / Power 33, 3 mm × 3 mm) | SOT-363 (SC-70-6) 6-pin |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C (Tj) | — |
| Level ng MSL | 1 (per onsemi product page) | 1 (unlimited) |
| Tindminan RoHS | Compliant | Compliant |
| Body Diode | Integrated N-channel body diode | — |
| Configuration | Dual independent drain-source pairs | Dual, independent drains |
| Drain-Source Voltage (VDS) | — | 30 V |
| Gate-Source Voltage (VGS) | — | 20 V |
| Continuous Drain Current (ID) | — | 1 A |
| Power Dissipation (PD) | — | 320 mW |
| Temperature na Operasyon | — | -55C to +150C |
| Channel Mode | — | Enhancement |
| Lead-Free | — | Yes |
| Factory Pack Quantity | — | 3000 |