H5AN4G6NBJR-VKC vs H5ANAG6NBJR-PBC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN4G6NBJR-VKC sa pamamagitan ng SK hynix at H5ANAG6NBJR-PBC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN4G6NBJR-VKC | H5ANAG6NBJR-PBC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 4 Gbit | — |
| Memory Organization | 256M x 16 | — |
| Rate ng Data | 2666 Mbps | — |
| Clock Frequency | 1.6 GHz (internal reference per distributor data) | — |
| Supply Voltage (VDD) | 1.2 V nominal (1.14 V to 1.26 V) | — |
| Operating Current | 38 mA (typical, per distributor data) | — |
| Interface | Parallel | — |
| Technology | CMOS | — |
| Temperature na Operasyon | -40C to +95C | [DATA_NEEDED: Operating Temperature] |
| Packhaging | FBGA-96 / TFBGA (PBGA96) | FBGA-96 |
| Body Size | 13 mm, 1.2 mm profile, 0.8 mm ball pitch | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration; write leveling | — |
| Protection Functions | Asynchronous reset; CRC; data mask | — |
| Refresh | Auto self-refresh | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS Status] |
| Packaging | Tray | — |
| Density | — | 16 Gb (2 GB) |
| Volte ng Pagbibigay | — | 1.2 V |
| Generation Max Data Rate | — | 3200 MT/s (family max) |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes |
| Asynchronous Reset | — | Yes |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Speed Bin (PBC) | — | [DATA_NEEDED: Speed grade MT/s] |
| Organisasyon | — | [DATA_NEEDED: Organization x16/x8] |