H5AN4G6NBJR-VKC vs H5ANAG6NBJR-PBC 比較
詳細並排比較 H5AN4G6NBJR-VKC 由 SK hynix 與 H5ANAG6NBJR-PBC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN4G6NBJR-VKC | H5ANAG6NBJR-PBC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 4 Gbit | — |
| Memory Organization | 256M x 16 | — |
| 資料速率 | 2666 Mbps | — |
| Clock Frequency | 1.6 GHz (internal reference per distributor data) | — |
| Supply Voltage (VDD) | 1.2 V nominal (1.14 V to 1.26 V) | — |
| Operating Current | 38 mA (typical, per distributor data) | — |
| 介面 | Parallel | — |
| Technology | CMOS | — |
| 工作溫度 | -40C to +95C | [DATA_NEEDED: Operating Temperature] |
| 封裝 | FBGA-96 / TFBGA (PBGA96) | FBGA-96 |
| Body Size | 13 mm, 1.2 mm profile, 0.8 mm ball pitch | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration; write leveling | — |
| Protection Functions | Asynchronous reset; CRC; data mask | — |
| Refresh | Auto self-refresh | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS Status] |
| Packaging | Tray | — |
| Density | — | 16 Gb (2 GB) |
| 供應電壓 | — | 1.2 V |
| Generation Max Data Rate | — | 3200 MT/s (family max) |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes |
| Asynchronous Reset | — | Yes |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Speed Bin (PBC) | — | [DATA_NEEDED: Speed grade MT/s] |
| 組織 | — | [DATA_NEEDED: Organization x16/x8] |