IPTC017N12NM6ATMA1 vs ISZ230N10NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPTC017N12NM6ATMA1 sa pamamagitan ng Infineon at ISZ230N10NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPTC017N12NM6ATMA1 - 120V 1.7mΩ 331A OptiMOS 6 MOSFET | Infineon
IPTC017N12NM6ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPTC017N12NM6ATMA1 | ISZ230N10NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS 6, N-channel trench MOSFET | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Continuous Drain Current (ID, Ta) | 32 A | — |
| Continuous Drain Current (ID, Tc) | 331 A | — |
| On-State Resistance RDS(on) max | 1.7 mΩ at VGS = 10 V | — |
| Gate-Source Threshold VGS(th) | 2.4 V (typ) | — |
| Total Gate Charge QG | 141 nC at VGS = 10 V | — |
| Input Capacitance Ciss | 2.4 nF at VDS = 60 V | — |
| Output Capacitance Coss | 11000 pF at VDS = 60 V | — |
| Power Dissipation (Ta) | 3.8 W | 3 W |
| Power Dissipation (Tc) | 395 W | 48 W |
| Packhaging | PG-HDSOP-16 (Surface Mount) | PG-TSDSON-8 FL (3.3 x 3.3 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55 °C to +175 °C (TJ max) | — |
| Gate Drive Voltage (recommended) | 10 V | 10 V |
| Tindminan RoHS | Compliant | Compliant |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (Ta) | — | 7.7 A |
| Continuous Drain Current (Tc) | — | 31 A |
| On-Resistance RDS(on) at VGS=10V | — | 23 mΩ (typ, ID=10A) |
| Gate Threshold Voltage VGS(th) | — | 3.3 V (typ at 13 µA) |
| Hanay ng Temperature na Operasyon | — | -55 °C to +150 °C (junction) |
| Level ng MSL | — | MSL1 (per JEDEC J-STD-020) |
| Family | — | OptiMOS 6 (100V class) |