IRFS3107TRL7PP vs IRFS3006TRL7PP Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFS3107TRL7PP sa pamamagitan ng Infineon at IRFS3006TRL7PP sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRFS3006TRL7PP - 60V 240A N-Ch HEXFET MOSFET | D2PAK-7 | Infineon
IRFS3006TRL7PP ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRFS3107TRL7PP | IRFS3006TRL7PP |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel MOSFET | — |
| Technology | IR HEXFET (Planar DMOS) | HEXFET (IR MOSFET™ planar) |
| Drain-Source Voltage (VDS) Max | 75 V | — |
| Continuous Drain Current (ID) @ Tc=25C | 240 A (DigiKey) / 195 A (per package datasheet snippet) | — |
| Pulsed Drain Kuru-kuryente | [DATA_NEEDED: pulsed ID] | — |
| RDS(on) Max @ VGS=10V | 3 mOhm (Infineon) / 2.6 mOhm (Mouser) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical range] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Gate Charge (Qg) Typical | 160 nC | — |
| Maximum Power Dissition @ Tc=25C | 370 W | — |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | — |
| Packhaging | D2PAK-7 (TO-263CB, 6 leads + tab) | D2PAK (TO-263), 7-Lead, Surface Mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 240 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current rating] |
| On-Resistance RDS(on) max | — | 2.1 mΩ (per Mouser snippet) |
| On-Resistance RDS(on) typ | — | 1.5 mΩ |
| Gate Charge (Qg) | — | 200 nC (typical) |
| Power Dissipation (PD) at Tc | — | 375 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Body Diode | — | Intrinsic, avalanche-rated |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: single-pulse avalanche energy] |
| RθJC Thermal Resistance | — | [DATA_NEEDED: junction-to-case thermal resistance] |