IRLR3110ZTRPBF vs IRFR3411TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLR3110ZTRPBF sa pamamagitan ng Infineon at IRFR3411TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRLR3110ZTRPBF IRLR3110ZTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR3110ZTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR3110ZTRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRLR3110ZTRPBF IRFR3411TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 42 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
RDS(on) max @ VGS=10V 14 mOhm 44 mOhm
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) 15 nC —
Power Dissipation (PD) at TC=25C 140 W —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging TO-252AA (DPAK) TO-252AA (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET / Trench MOSFET HEXFET Power MOSFET (IR)
Level ng MSL 1 (Unlimited) —
Tindminan RoHS Compliant —
Lead-Free Plating Yes (PBF suffix) —
Wala sa Halogen Yes —
Polarity — N-Channel
V(BR)DSS (Drain-Source Breakdown Voltage) — 100 V
Continuous Drain Current (Id) @ Tc — 32 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Pd) @ Tc — 130 W
Gate Charge (Qg) — 48 nC
Operating Mode — Enhancement
Maximum Junction Temperature — 175 C
Hanay ng Temperature na Operasyon — -55 C to +175 C
Bilang ng Pins — 3
Avalanche Rated — Yes (fully avalanche rated)
dv/dt Rating — Dynamic dv/dt rated
Lead-Free / RoHS — Yes (Lead-free, PBF suffix)

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