IRLR3110ZTRPBF vs IRFR3411TRPBF 比較
詳細並排比較 IRLR3110ZTRPBF 由 Infineon 與 IRFR3411TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLR3110ZTRPBF | IRFR3411TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max @ VGS=10V | 14 mOhm | 44 mOhm |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| 工作接面溫度 | -55C to +175C | — |
| 封裝 | TO-252AA (DPAK) | TO-252AA (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET / Trench MOSFET | HEXFET Power MOSFET (IR) |
| MSL 等級 | 1 (Unlimited) | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free Plating | Yes (PBF suffix) | — |
| 無鹵素 | Yes | — |
| Polarity | — | N-Channel |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 100 V |
| Continuous Drain Current (Id) @ Tc | — | 32 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Pd) @ Tc | — | 130 W |
| Gate Charge (Qg) | — | 48 nC |
| Operating Mode | — | Enhancement |
| Maximum Junction Temperature | — | 175 C |
| 工作溫度範圍 | — | -55 C to +175 C |
| 腳位數 | — | 3 |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| dv/dt Rating | — | Dynamic dv/dt rated |
| Lead-Free / RoHS | — | Yes (Lead-free, PBF suffix) |