K3LK4L40DM-BGCT vs K4A4G165WF-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K3LK4L40DM-BGCT sa pamamagitan ng Samsung Electronics at K4A4G165WF-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K3LK4L40DM-BGCT | K4A4G165WF-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $8.20 |
| Uri ng Memory | DRAM (SDRAM component) | DDR4 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | — |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Rate ng Data | [DATA_NEEDED: Data Rate] | — |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature Range] | 0C to +95C |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS Status] | Compliant |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| Level ng MSL | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Laki ng Memory | — | 4 Gbit |
| Organisasyon | — | 256M x 16 |
| Speed (Data Rate) | — | 2666 Mbps (DDR4-2666) |
| Supply Voltage VDD | — | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage VDDQ | — | 1.2 V |
| Interface | — | SSTL-12 |
| Packhaging | — | FBGA-96 (PBGA96) |
| Mga Karakteristika | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Technology | — | Samsung F-die CMOS |
| Bank Groups | — | 4 (x16 configuration) |
| Refresh | — | Self-refresh and auto-refresh supported |