K4A4G085WD vs K4A4G085WG-BCWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G085WD sa pamamagitan ng Samsung Electronics at K4A4G085WG-BCWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4A4G085WD | K4A4G085WG-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $2.05 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (Volatile) |
| Die Generation | D-die | — |
| Density | 4 Gb | — |
| Organisasyon | 512M x 8 | — |
| Rate ng Data | Up to 2400 Mbps (speed-grade dependent) | 3200 Mbps/pin |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Packhaging | 78-ball FBGA | FBGA-78 (BCW) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Speed Grade (example) | -BCPB (DDR4-2400), -BCRC | — |
| Uri ng Interface | DDR4 (double data rate, source-synchronous) | — |
| Bank Group Architecture | Yes (DDR4 bank groups) | — |
| ODT | On-Die Termination (built-in) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| CAS Latency (typical) | [DATA_NEEDED: CL per speed grade] | — |
| Refresh | [DATA_NEEDED: refresh interval] | [DATA_NEEDED: refresh rate specification] |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Laki ng Memory | — | 4 Gb |
| Memory Organization | — | 512M x 8 |
| Speed Class | — | DDR4-3200 |
| Technology | — | D-die DDR4 |
| Interface | — | Parallel (DDR4) |
| Burst Length | — | BL8 |
| DLL Mode | — | DLL Enabled (per datasheet timing) |
| Packaging | — | Tray |