K4AAG165WA-BCWE vs K4AAG165WA-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4AAG165WA-BCWE sa pamamagitan ng Samsung Electronics at K4AAG165WA-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4AAG165WA-BCWE - 16Gb DDR4 3200Mbps SDRAM | Samsung
K4AAG165WA-BCWE ✓ NakahandaSamsung Electronics
K4AAG165WA-BCPB - 16Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4AAG165WA-BCPB ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4AAG165WA-BCWE | K4AAG165WA-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | Volatile DRAM (DDR4 SDRAM) |
| Laki ng Memory | 16 Gb (2 GB) | — |
| Memory Organization | 1G x 16 | — |
| Rate ng Data | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | 96-ball FBGA | FBGA-96 |
| Package Dimensions | 13 x 9 mm | — |
| Ball Pitch | 0.8 mm | — |
| Temperature na Operasyon | -40C to +95C | [DATA_NEEDED: operating temperature for BCPB grade] |
| Uri ng Interface | Parallel, DDR4 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Memory Format | DRAM (Volatile) | DRAM |
| Technology | DDR4 SDRAM, 8n prefetch, bank group architecture | DDR4 |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | Tray |
| Product Status | Active | Active |
| Density | — | 16 Gb |
| Organisasyon | — | 1G x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface Voltage (VDDQ) | — | 1.2 V |
| Power Consumption | — | 25% lower than DDR3 (per Samsung DDR4 family) |
| Bank Group Architecture | — | Yes (DDR4 internal bank groups) |
| On-Die Termination (ODT) | — | Yes |
| Max Capacity Family | — | Up to 32GB component (Samsung DDR4 family) |