K4AAG165WA-BCWE vs K4AAG165WA-BCPB 比較
詳細並排比較 K4AAG165WA-BCWE 由 Samsung Electronics 與 K4AAG165WA-BCPB 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4AAG165WA-BCWE | K4AAG165WA-BCPB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | Volatile DRAM (DDR4 SDRAM) |
| 記憶體容量 | 16 Gb (2 GB) | — |
| Memory Organization | 1G x 16 | — |
| 資料速率 | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| 供應電壓 | 1.2 V | — |
| 封裝 | 96-ball FBGA | FBGA-96 |
| Package Dimensions | 13 x 9 mm | — |
| Ball Pitch | 0.8 mm | — |
| 工作溫度 | -40C to +95C | [DATA_NEEDED: operating temperature for BCPB grade] |
| 介面類型 | Parallel, DDR4 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Memory Format | DRAM (Volatile) | DRAM |
| Technology | DDR4 SDRAM, 8n prefetch, bank group architecture | DDR4 |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | Tray |
| Product Status | Active | Active |
| Density | — | 16 Gb |
| 組織 | — | 1G x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface Voltage (VDDQ) | — | 1.2 V |
| Power Consumption | — | 25% lower than DDR3 (per Samsung DDR4 family) |
| Bank Group Architecture | — | Yes (DDR4 internal bank groups) |
| On-Die Termination (ODT) | — | Yes |
| Max Capacity Family | — | Up to 32GB component (Samsung DDR4 family) |