K6F2016U4E-EF70T vs K6F3216U6M-EF70T Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K6F2016U4E-EF70T sa pamamagitan ng Samsung Electro-Mechanics at K6F3216U6M-EF70T sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electro-Mechanics
K6F2016U4E-EF70T - 2Mbit Async SRAM 70ns 48-TFBGA | Samsung
K6F2016U4E-EF70T ✓ NakahandaSamsung Electronics
K6F3216U6M-EF70T - 32Mbit Async SRAM 2Mx16 | Samsung
K6F3216U6M-EF70T ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K6F2016U4E-EF70T | K6F3216U6M-EF70T |
|---|---|---|
| Brand | Samsung Electro-Mechanics | Samsung Electronics |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | SRAM - Asynchronous | SRAM - Asynchronous |
| Laki ng Memory | 2 Mbit | 32 Mbit |
| Organisasyon | 128K x 16 | 2M x 16 |
| Interface | Parallel | Parallel |
| Access Time (tAA) | 70 ns | — |
| Supply Voltage (VCC) | 2.7 V to 3.3 V | — |
| Technology | Full CMOS | Full CMOS Static RAM |
| Packhaging | 48-TFBGA (6 x 7) | 55-TFBGA (7.5 x 12 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Active Supply Current (ICC1) | [DATA_NEEDED: ICC1] | — |
| Standby Current (ICC2) | [DATA_NEEDED: ICC2 for 70 ns grade] | — |
| Control Signals | CE, OE, WE | — |
| Refresh Requirement | None (static RAM) | None (static memory) |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | NO (per third-party listing) |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | [DATA_NEEDED: MSL level] | — |
| Volte ng Pagbibigay | — | 3 V |
| Access Time | — | 55 ns |
| Speed Grade | — | -EF70 (55 ns) |
| Standard Pack Qty | — | 2400 |
| Memory Composition | — | Volatile SRAM |