K6F2016U4E-EF70T vs K6F3216U6M-EF70T 比較
詳細並排比較 K6F2016U4E-EF70T 由 Samsung Electro-Mechanics 與 K6F3216U6M-EF70T 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electro-Mechanics
K6F2016U4E-EF70T - 2Mbit Async SRAM 70ns 48-TFBGA | Samsung
K6F2016U4E-EF70T ✓ 啟用中
規格比較
| 參數 | K6F2016U4E-EF70T | K6F3216U6M-EF70T |
|---|---|---|
| 品牌 | Samsung Electro-Mechanics | Samsung Electronics |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | SRAM - Asynchronous | SRAM - Asynchronous |
| 記憶體容量 | 2 Mbit | 32 Mbit |
| 組織 | 128K x 16 | 2M x 16 |
| 介面 | Parallel | Parallel |
| Access Time (tAA) | 70 ns | — |
| Supply Voltage (VCC) | 2.7 V to 3.3 V | — |
| Technology | Full CMOS | Full CMOS Static RAM |
| 封裝 | 48-TFBGA (6 x 7) | 55-TFBGA (7.5 x 12 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Active Supply Current (ICC1) | [DATA_NEEDED: ICC1] | — |
| Standby Current (ICC2) | [DATA_NEEDED: ICC2 for 70 ns grade] | — |
| Control Signals | CE, OE, WE | — |
| Refresh Requirement | None (static RAM) | None (static memory) |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | NO (per third-party listing) |
| 濕度敏感等級 (MSL) | [DATA_NEEDED: MSL level] | — |
| 供應電壓 | — | 3 V |
| Access Time | — | 55 ns |
| Speed Grade | — | -EF70 (55 ns) |
| Standard Pack Qty | — | 2400 |
| Memory Composition | — | Volatile SRAM |