M29F200FT55N3F2 vs M29F200FT55N3E2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29F200FT55N3F2 sa pamamagitan ng Micron Technology at M29F200FT55N3E2 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29F200FT55N3E2 - 2Mbit 5V NOR Flash 55ns TSOP-48 | Micron
M29F200FT55N3E2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29F200FT55N3F2 | M29F200FT55N3E2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | NOR Flash, Parallel | NOR Flash |
| Density | 2 Mbit (2097 kbits) | 2 Mbit (2097 kbits) |
| Organisasyon | 256K x 8-bit / 128K x 16-bit | — |
| Supply Voltage (VCC) | 5 V | — |
| Access Time | 55 ns | 55 ns |
| Number of Words | 128 K | 128 k |
| Bits per Word | 16 bits | 16 bits |
| Boot Block Architecture | Top Boot Block | — |
| Program/Erase | Embedded byte/word program algorithms | — |
| Temperature na Operasyon | -40C to +125C | -40C to +125C |
| Packhaging | 48-pin TSOP | 48-TSOP I |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | Parallel, BYTE pin selects 8/16-bit bus | Parallel |
| Packaging | Tape & Reel (TR suffix) | Tray |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Memory Organization | — | 256K x 8 / 128K x 16 |
| Volte ng Pagbibigay | — | 5 V |
| Boot Block | — | Top boot block |
| Program / Erase | — | Embedded program/erase controller |
| Bus Mode | — | Byte (x8) / Word (x16) selectable |