M29W320DB70N3E vs M29W400FB55N3E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29W320DB70N3E sa pamamagitan ng Micron Technology at M29W400FB55N3E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron
M29W320DB70N3E ✓ NakahandaMicron Technology
M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology
M29W400FB55N3E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29W320DB70N3E | M29W400FB55N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Flash | EEPROM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | NOR Flash | NOR Flash (parallel) |
| Density | 32 Mbit (33554 kbits) | 4 Mbit (4194 kbits) |
| Organisasyon | 2M x 16 | 512K x 8 bit / 256K x 16 bit |
| Number of Words | 2000 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 70 ns | 55 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| VPP Fast Program Voltage | 12 V (optional) | — |
| Interface | Parallel | Parallel, 8-bit/16-bit (BYTE# selectable) |
| Block Architecture | Non-uniform parameter blocks, boot block (bottom boot, DB type) | 19 memory blocks, 1 boot block (bottom, FB) |
| Temperature na Operasyon | -40C to +125C | -40C to +125C |
| Packhaging | 48-TSOP I | 48-TSOP I, 12 x 20 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | ROHS3 Compliant | Compliant |
| Programming Mode | Single VCC program/erase; automatic program/erase with status polling | — |
| Power-Up Mode | Read mode (default) | — |
| Programming Time | — | 10 us per byte/word typical |
| Boot Block Hardware Protection | — | Yes |
| Pins | — | 48 |
| Packaging | — | Tray |
| Speed Grades in Family | — | 55 ns, 70 ns |