MMBF170LT1 vs 2N7002L Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MMBF170LT1 sa pamamagitan ng onsemi at 2N7002L sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro MMBF170LT1 2N7002L
Brand onsemi onsemi
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer onsemi (ON Semiconductor) onsemi
Part Number MMBF170LT1 —
Uri ng Transistor N-Channel MOSFET, Enhancement Mode N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDSS) 60 V —
Drain-Gate Voltage (VDGS) 60 Vdc —
Gate-Source Voltage - Continuous (VGS) ±20 Vdc (per datasheet) —
Gate-Source Voltage - Non-repetitive (VGSM) ±40 Vpk (tp <= 50 ms) —
Continuous Drain Current (ID) 500 mA (Ta) 115 mA (Ta)
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
Total Device Dissipation (PD) 225 mW (Ta, FR-5 board) —
Hanay ng Temperature na Operasyon -55 °C to +150 °C (TJ max per datasheet) —
Packhaging / Kaso SOT-23-3 (TO-236) —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 —
Tindminan RoHS Compliant (per onsemi product page) [DATA_NEEDED: RoHS status]
AEC-Q101 Qualified Yes (per datasheet) —
Technology DMOS High cell density trench MOSFET
Polarity N-Channel —
Drain-Source Voltage (VDS) — 60 V
On-State Resistance (RDS(on)) — 7.5 ohm max at VGS = 5V
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage (VGS(th)) — 1 V to 2.5 V
Power Dissipation (PD) — 200 mW (Ta), 225 mW max
Packhaging — SOT-23 (SOT-23-3)
Configuration — Single FET
Switching Performance — Fast switching, rugged and reliable
Gate Drive — 5V logic-level enhancement mode
Typical Applications — Low-side switching, servo motor control, gate driving, logic-level shifting

Mga Datasheets at Resources

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