MMBF170LT1 vs 2N7002LT1G Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MMBF170LT1 sa pamamagitan ng onsemi at 2N7002LT1G sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

onsemi
2N7002LT1G 2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MMBF170LT1 2N7002LT1G
Brand onsemi onsemi
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer onsemi (ON Semiconductor) onsemi (ON Semiconductor)
Part Number MMBF170LT1 —
Uri ng Transistor N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage (VDSS) 60 V —
Drain-Gate Voltage (VDGS) 60 Vdc —
Gate-Source Voltage - Continuous (VGS) ±20 Vdc (per datasheet) —
Gate-Source Voltage - Non-repetitive (VGSM) ±40 Vpk (tp <= 50 ms) —
Continuous Drain Current (ID) 500 mA (Ta) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
Total Device Dissipation (PD) 225 mW (Ta, FR-5 board) —
Hanay ng Temperature na Operasyon -55 °C to +150 °C (TJ max per datasheet) [DATA_NEEDED: operating temperature range]
Packhaging / Kaso SOT-23-3 (TO-236) —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 —
Tindminan RoHS Compliant (per onsemi product page) —
AEC-Q101 Qualified Yes (per datasheet) —
Technology DMOS MOSFET
Polarity N-Channel N-Channel
Channel Mode — Enhancement Mode
Drain-Source Voltage VDSS — 60 V
Continuous Drain Current ID — 115 mA (Tc)
Power Dissipation PD — 225 mW (Ta)
Maximum RDS(on) — 7.5 ohm @ VGS = 5 V
Configuration — Single FET
Packhaging — SOT-23-3 (TO-236)
Bilang ng Pins — 3
Kategorya — Small Signal MOSFET
Lead Finish — [DATA_NEEDED: lead finish/plating]
Packaging — [DATA_NEEDED: packaging type]

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