MMBF170LT1 vs 2N7002LT1G 比較

詳細並排比較 MMBF170LT1 由 onsemi 與 2N7002LT1G 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

onsemi
2N7002LT1G 2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G ✓ 啟用中

規格比較

參數 MMBF170LT1 2N7002LT1G
品牌 onsemi onsemi
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer onsemi (ON Semiconductor) onsemi (ON Semiconductor)
Part Number MMBF170LT1 —
電晶體類型 N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage (VDSS) 60 V —
Drain-Gate Voltage (VDGS) 60 Vdc —
Gate-Source Voltage - Continuous (VGS) ±20 Vdc (per datasheet) —
Gate-Source Voltage - Non-repetitive (VGSM) ±40 Vpk (tp <= 50 ms) —
Continuous Drain Current (ID) 500 mA (Ta) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
Total Device Dissipation (PD) 225 mW (Ta, FR-5 board) —
工作溫度範圍 -55 °C to +150 °C (TJ max per datasheet) [DATA_NEEDED: operating temperature range]
封裝 / 外殼 SOT-23-3 (TO-236) —
安裝類型 Surface Mount Surface Mount
腳位數 3 —
RoHS 狀態 Compliant (per onsemi product page) —
AEC-Q101 Qualified Yes (per datasheet) —
Technology DMOS MOSFET
Polarity N-Channel N-Channel
Channel Mode — Enhancement Mode
Drain-Source Voltage VDSS — 60 V
Continuous Drain Current ID — 115 mA (Tc)
Power Dissipation PD — 225 mW (Ta)
Maximum RDS(on) — 7.5 ohm @ VGS = 5 V
Configuration — Single FET
封裝 — SOT-23-3 (TO-236)
腳位數 — 3
類別 — Small Signal MOSFET
Lead Finish — [DATA_NEEDED: lead finish/plating]
Packaging — [DATA_NEEDED: packaging type]

資料表與資源

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