MRF6V2300NR1 vs MRF6V2300NR5 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF6V2300NR1 sa pamamagitan ng NXP Semiconductors at MRF6V2300NR5 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF6V2300NR1 - 300W, 50V RF Power MOSFET 10-600 MHz | NXP
MRF6V2300NR1 ✓ NakahandaNXP Semiconductors
MRF6V2300NR5 - 300W RF Power MOSFET, 10-600 MHz, 50V | NXP
MRF6V2300NR5 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF6V2300NR1 | MRF6V2300NR5 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | RF Power MOSFET (LDMOS, N-Channel, Enhancement-Mode, Lateral) | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Drain-Source Voltage (Vdss) | 110 V | — |
| Continuous Drain Current (Id) | 2.5 mA DC bias reference | — |
| Output Power (Pout) | 300 W CW | — |
| Test Frequency | 220 MHz | 220 MHz |
| Power Gain | 25.5 dB | — |
| Operating Frequency Range | 10 MHz to 600 MHz | — |
| Drain Bias Voltage | 50 V | — |
| Mode of Operation | CW (continuous wave), Class AB | — |
| Package Type | TO-270 WB-4 (ceramic, flanged, single-ended) | — |
| Input Matching | Unmatched | Unmatched (external matching required) |
| Output Matching | Unmatched | — |
| Technology | Lateral MOSFET (LDMOS-like) | Lateral Double-Diffused MOS (LDMOS) |
| Uri ng Pagpapasok | Surface / flange-mount with screws | Chassis / Heatsink Mount |
| Tindminan RoHS | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS status] |
| Temperature na Operasyon | [DATA_NEEDED: junction/case temperature range] | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Drain-Source Voltage (Vdss) Rated | — | 110 V |
| Typical Operating Drain Voltage | — | 50 V |
| Frequency Range | — | 10 MHz to 600 MHz |
| Typical Output Power (CW) | — | 300 W |
| Typical Power Gain | — | 25.5 dB at 220 MHz |
| Drain Current (Id) | — | 900 mA (DC bias) |
| Packhaging | — | TO-270 WB-4 (ceramic, air-cavity, bolt-down) |
| Operating Mode | — | CW large-signal / driver |
| Application | — | Industrial, medical, scientific RF power |