MRFG35010NT1 vs MRF6S21100HR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRFG35010NT1 sa pamamagitan ng NXP Semiconductors at MRF6S21100HR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | MRFG35010NT1 | MRF6S21100HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRFG35010NT1 | — |
| Uri ng Transistor | GaAs pHEMT RF Power FET | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Drain-Source Voltage Rating (Vds) | 15 V | — |
| Continuous Drain Current Rating | 2.9 A | — |
| Operating Frequency | 3.55 GHz | — |
| Frequency Range | 1.8 GHz to 3.6 GHz | — |
| Test Voltage | 12 V | — |
| Test Current (quiescent) | 180 mA | — |
| Associated Power Gain | 10 dB at 3.55 GHz | — |
| Output Power | 9 W at 3.55 GHz | — |
| Configuration | Unmatched, common source | Single |
| Class of Operation | Class AB linear | — |
| Packhaging / Kaso | PLD-1.5 flanged ceramic | — |
| Supplier Device Package | PLD-1.5 | — |
| Uri ng Pagpapasok | Chassis-mount / flange-bolt | Surface Mount / bolt-down flange |
| Lead Free Status | Lead free (per datasheet) | [DATA_NEEDED: RoHS/lead-free explicit statement] |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: explicit RoHS compliance statement] |
| Frequency Band | — | 2.11 GHz to 2.17 GHz |
| Output Power (Average) | — | 23 W (W-CDMA, CW equivalent ~100 W PEP) |
| Power Gain (Typ) | — | 15.9 dB at 2.14 GHz |
| Drain-Source Voltage Rating (VDS max) | — | 68 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Quiescent Drain Current (IDQ) | — | 950 mA |
| Test Drain Current | — | 950 mA |
| Packhaging | — | NI-780H-2L (ceramic flange) |
| Maximum Power Dissipation (Abs) | — | 388 W |
| Operating Mode | — | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) |
| Terminal Position | — | Dual |