MRFG35010NT1 vs MRF6S21100HR3 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRFG35010NT1 tarafından NXP Semiconductors ve MRF6S21100HR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRFG35010NT1 MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 Obsolete
NXP Semiconductors
MRF6S21100HR3 MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 ✓ Aktif

Özellik Karşılaştırması

Parametre MRFG35010NT1 MRF6S21100HR3
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Obsolete Aktif
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Part Number MRFG35010NT1 —
Transistor Türü GaAs pHEMT RF Power FET LDMOS (N-Channel Enhancement-Mode Lateral MOSFET)
Drain-Source Voltage Rating (Vds) 15 V —
Continuous Drain Current Rating 2.9 A —
Operating Frequency 3.55 GHz —
Frequency Range 1.8 GHz to 3.6 GHz —
Test Voltage 12 V —
Test Current (quiescent) 180 mA —
Associated Power Gain 10 dB at 3.55 GHz —
Output Power 9 W at 3.55 GHz —
Configuration Unmatched, common source Single
Class of Operation Class AB linear —
Paket / Kas PLD-1.5 flanged ceramic —
Supplier Device Package PLD-1.5 —
Montaj Türü Chassis-mount / flange-bolt Surface Mount / bolt-down flange
Lead Free Status Lead free (per datasheet) [DATA_NEEDED: RoHS/lead-free explicit statement]
RoHS Durumu [DATA_NEEDED: RoHS status] [DATA_NEEDED: explicit RoHS compliance statement]
Frequency Band — 2.11 GHz to 2.17 GHz
Output Power (Average) — 23 W (W-CDMA, CW equivalent ~100 W PEP)
Power Gain (Typ) — 15.9 dB at 2.14 GHz
Drain-Source Voltage Rating (VDS max) — 68 V
Test Supply Voltage (VDD) — 28 V
Quiescent Drain Current (IDQ) — 950 mA
Test Drain Current — 950 mA
Paket — NI-780H-2L (ceramic flange)
Maximum Power Dissipation (Abs) — 388 W
Operating Mode — Class AB (PCN/PCS/cellular, WLL, TD-SCDMA)
Terminal Position — Dual

Dökümanlar & Kaynaklar

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