N25Q016A11EV7A0 vs N25Q032A13EV741 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng N25Q016A11EV7A0 sa pamamagitan ng Micron Technology at N25Q032A13EV741 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
N25Q016A11EV7A0 - 16Mbit SPI NOR Flash 108MHz | Micron
N25Q016A11EV7A0 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | N25Q016A11EV7A0 | N25Q032A13EV741 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Obsolete |
| Uri ng Memory | FLASH - NOR Memory IC | Non-Volatile, FLASH - NOR |
| Laki ng Memory | 16 Mbit (2 MB) | 32Mbit (8M x 4) |
| Interface | SPI | — |
| Maksimum na Taktiko ng Oras | 108 MHz | 108 MHz |
| Volte ng Pagbibigay | 1.8 V (V11 grade) | 2.7 V to 3.6 V |
| Packhaging | 8-pin WSON (DFN-8 style, EV suffix) | 8-lead VDFPN (EV) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Protocol Support | Standard SPI, Dual SPI, Quad SPI | — |
| Programming | Page program, sector/block erase | — |
| Family | N25Q | — |
| Speed Grade | 108 MHz (highest N25Q 16Mbit grade) | — |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature] | — |
| Erase/Program Cycles | [DATA_NEEDED: Endurance] | — |
| Data Retention | [DATA_NEEDED: Data Retention] | — |
| Package Dimensions | [DATA_NEEDED: Package Dimensions] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS Status] | — |
| Memory Format | — | FLASH |
| Memory Interface | — | SPI |
| Write Cycle Time - Word | — | 8 ms |
| Write Cycle Time - Page | — | 5 ms |
| Technology | — | FLASH - NOR (SLC) |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | — | 3 (168 Hours) |
| Packaging | — | Bulk |
| Part Status | — | Obsolete |
| Application Segment | — | Telecom |