W989D6DBGX6I vs W989D6DBGX6I-TR Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng W989D6DBGX6I sa pamamagitan ng Winbond at W989D6DBGX6I-TR sa pamamagitan ng Winbond. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro W989D6DBGX6I W989D6DBGX6I-TR
Brand Winbond Winbond
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory Mobile LPSDR SDRAM Mobile LPSDR SDR SDRAM (Volatile DRAM)
Memory Density 512 Mbit (32M x 16) —
Organisasyon 32M words x 16 bit 32M x 16 (16-bit data bus)
Width ng Data Bus 16 bit —
Maksimum na Taktiko ng Oras 166 MHz 166 MHz
Access Time 5 ns —
Supply Voltage VDD 1.8 V (typ) —
Uri ng Interface Parallel, LVCMOS —
Number of Banks 4 —
Latensya ng CAS Programmable 2 or 3 —
Burst Length 1, 2, 4, 8, Full Page 1, 2, 4, 8, full page
Self-Refresh Yes (with PASR) —
Deep Power-Down Yes —
Process Technology 46 nm CMOS 46 nm
Temperature na Operasyon -40C to +85C (Industrial) -40C to +85C (Industrial)
Packhaging 54-ball VFBGA (8 mm x 9 mm) 54-ball VFBGA, 8 mm x 9 mm
Ball Pitch 0.8 mm —
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 3 3 (168 hours)
Tindminan RoHS Compliant Compliant
Density — 512 Mbit
Clock Access Time — 5 ns
Supply Voltage (VDD/VDDQ) — 1.8 V (typical); 1.7 V to 1.95 V range
Number of Internal Banks — 4
CAS Latency (CL) — 2 / 3 selectable via MRS
Refresh Window — 1024 cycles / 16 ms
Packaging Option — Tape & Reel (-TR suffix)
Low-Power Modes — Partial-Array Self-Refresh (PASR), Deep Power-Down (DPD)
Lead-Free — Yes

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