CGD65A130S2 vs CGD65A130SH2 Karşılaştırma

Ayrıntılı yan yana karşılaştırma CGD65A130S2 tarafından Cambridge GaN Devices ve CGD65A130SH2 tarafından Cambridge GaN DevicesAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Cambridge GaN Devices
CGD65A130S2 CGD65A130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices

CGD65A130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices

CGD65A130S2 ✓ Aktif
Cambridge GaN Devices
CGD65A130SH2 CGD65A130SH2 - 650V GaN HEMT 12A 55mΩ ICeGaN | Cambridge GaN Devices

CGD65A130SH2 - 650V GaN HEMT 12A 55mΩ ICeGaN | Cambridge GaN Devices

CGD65A130SH2 ✓ Aktif

Özellik Karşılaştırması

Parametre CGD65A130S2 CGD65A130SH2
Marka Cambridge GaN Devices Cambridge GaN Devices
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Cambridge GaN Devices —
Technology GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) GaN-on-Si with ICeGaN® gate
Drain-Source Voltage (VDS, max) 650 V —
On-State Resistance (RDS(on)) 130 mΩ (typ) —
Continuous Drain Current (ID) [DATA_NEEDED: continuous ID at 25°C and 100°C] 12 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] —
Gate Charge (Qg, total) [DATA_NEEDED: Qg typical value] —
Output Capacitance (Coss) [DATA_NEEDED: Coss value at VDS=400V] —
Reverse Recovery Charge (Qrr) 0 nC (GaN - negligible) Near zero (GaN intrinsic; datasheet figure)
Gate-Source Voltage Rating ±20 V (ICeGaN robust gate; see datasheet) —
İşletim Jant Sıcaklığı -40°C to +150°C —
Paket DFN-16 (8 × 8 mm) with exposed pad 16-DFN (8x8 mm) with exposed thermal pad
Montaj Türü Surface Mount Surface Mount
Integrated Features Current sense, Miller clamp (NL³), ICeGaN gate —
RoHS Durumu Compliant Compliant
MSL Seviyesi [DATA_NEEDED: MSL rating] MSL3 (typical for 16-DFN GaN packages)
Transistor Türü — GaN HEMT, N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 650 V
On-Resistance (RDS(on)) — 55 mΩ (typical)
Gate Threshold — ICeGaN® 5 V compatible gate-threshold window
Current Sense Pin — Integrated CS output (digital/analog ratio) with NL³ circuit
Switching Frequency Suitability — Up to several MHz (typical GaN-HEMT range)
İşletim Sıcaklığı — [DATA_NEEDED: full -40C to +150C TJ range]
Klorürsüz — Yes

Dökümanlar & Kaynaklar

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