CGD65A130S2 vs CGD65A130SH2 比較
詳細並排比較 CGD65A130S2 由 Cambridge GaN Devices 與 CGD65A130SH2 由 Cambridge GaN Devices. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Cambridge GaN Devices
CGD65A130SH2 - 650V GaN HEMT 12A 55mΩ ICeGaN | Cambridge GaN Devices
CGD65A130SH2 ✓ 啟用中規格比較
| 參數 | CGD65A130S2 | CGD65A130SH2 |
|---|---|---|
| 品牌 | Cambridge GaN Devices | Cambridge GaN Devices |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Cambridge GaN Devices | — |
| Technology | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) | GaN-on-Si with ICeGaN® gate |
| Drain-Source Voltage (VDS, max) | 650 V | — |
| On-State Resistance (RDS(on)) | 130 mΩ (typ) | — |
| Continuous Drain Current (ID) | [DATA_NEEDED: continuous ID at 25°C and 100°C] | 12 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Gate Charge (Qg, total) | [DATA_NEEDED: Qg typical value] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss value at VDS=400V] | — |
| Reverse Recovery Charge (Qrr) | 0 nC (GaN - negligible) | Near zero (GaN intrinsic; datasheet figure) |
| Gate-Source Voltage Rating | ±20 V (ICeGaN robust gate; see datasheet) | — |
| 工作接面溫度 | -40°C to +150°C | — |
| 封裝 | DFN-16 (8 × 8 mm) with exposed pad | 16-DFN (8x8 mm) with exposed thermal pad |
| 安裝類型 | Surface Mount | Surface Mount |
| Integrated Features | Current sense, Miller clamp (NL³), ICeGaN gate | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL rating] | MSL3 (typical for 16-DFN GaN packages) |
| 電晶體類型 | — | GaN HEMT, N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 55 mΩ (typical) |
| Gate Threshold | — | ICeGaN® 5 V compatible gate-threshold window |
| Current Sense Pin | — | Integrated CS output (digital/analog ratio) with NL³ circuit |
| Switching Frequency Suitability | — | Up to several MHz (typical GaN-HEMT range) |
| 工作溫度 | — | [DATA_NEEDED: full -40C to +150C TJ range] |
| 無鹵素 | — | Yes |