IRFS7440TRLPBF vs IRFS4321TRLPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRFS7440TRLPBF tarafından Infineon ve IRFS4321TRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRFS7440TRLPBF IRFS4321TRLPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies —
Series StrongIRFET —
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology MOSFET (Metal Oxide Semiconductor) IR HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 40 V 150 V
Continuous Drain Current (ID) at Tc=25C 120 A 85 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Tc=25C 208 W 350 W
On-Resistance (RDS(on)) max at VGS=10V 2.5 mOhm —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 90 nC (typical) —
Gate Drive Voltage (optimized) 10 V (normal level) —
Operating Frequency Range (optimized) <100 kHz —
Paket TO-263 (D2PAK), surface mount TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Montaj Türü Surface Mount Surface Mount
İşletim Sıcaklığı Aralığı [DATA_NEEDED: junction temperature range] —
RoHS Durumu Compliant (lead-free) Compliant
Qualification JEDEC standard —
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
RDS(on) Max at VGS=10V — 15 mOhm
RDS(on) Max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-to-Source Voltage (VGS) Max — ±20 V
Gate Threshold Voltage (VGS(th)) Typ — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) Typ — 71 nC
Total Gate Charge (Qg) Max — 110 nC
Thermal Resistance Junction-to-Case (RθJC) Max — 0.45 C/W
Thermal Resistance Junction-to-Case (RθJC) End-of-Life — 0.65 C/W (after 1000 cycles -55C to +150C)
İşletim Jant Sıcaklığı — -55C to +175C

Dökümanlar & Kaynaklar

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