IRFS7440TRLPBF vs IRFS4321TRLPBF 比較

詳細並排比較 IRFS7440TRLPBF 由 Infineon 與 IRFS4321TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFS7440TRLPBF IRFS7440TRLPBF - 40V 120A StrongIRFET N-MOSFET | Infineon

IRFS7440TRLPBF - 40V 120A StrongIRFET N-MOSFET | Infineon

IRFS7440TRLPBF ✓ 啟用中

規格比較

參數 IRFS7440TRLPBF IRFS4321TRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Series StrongIRFET —
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology MOSFET (Metal Oxide Semiconductor) IR HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 40 V 150 V
Continuous Drain Current (ID) at Tc=25C 120 A 85 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Tc=25C 208 W 350 W
On-Resistance (RDS(on)) max at VGS=10V 2.5 mOhm —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 90 nC (typical) —
Gate Drive Voltage (optimized) 10 V (normal level) —
Operating Frequency Range (optimized) <100 kHz —
封裝 TO-263 (D2PAK), surface mount TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: junction temperature range] —
RoHS 狀態 Compliant (lead-free) Compliant
Qualification JEDEC standard —
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
RDS(on) Max at VGS=10V — 15 mOhm
RDS(on) Max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-to-Source Voltage (VGS) Max — ±20 V
Gate Threshold Voltage (VGS(th)) Typ — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) Typ — 71 nC
Total Gate Charge (Qg) Max — 110 nC
Thermal Resistance Junction-to-Case (RθJC) Max — 0.45 C/W
Thermal Resistance Junction-to-Case (RθJC) End-of-Life — 0.65 C/W (after 1000 cycles -55C to +150C)
工作接面溫度 — -55C to +175C

資料表與資源

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