ISC024N08NM7ATMA1 - 80V OptiMOS 7 N-Channel MOSFET | Infineon
MPN: ISC024N08NM7ATMA1 ✓ فعالISC024N08NM7ATMA1 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or convert electrical energy in power-electronics systems. N-channel MOSFETs (where the conducting channel carries electrons rather than holes) are preferred in low-voltage, high-current synchronous rectification because of their superior Rds(on) per unit silicon area. Within the broader taxonomy, the ISC024N08NM7 belongs to: power MOSFET -> N-channel MOSFET -> discrete semiconductor -> power-management component. The OptiMOS 7 platform specifically targets high-frequency SMPS, OR-ing, hot-swap, and motor-drive stages where switching losses dominate total losses.
Key features include ultra-low typical Rds(on) at 10 V Vgs, a logic-level-compatible gate threshold, fast switching transitions, and integrated gate protection. The PG-TDSON-8 footprint with exposed top-side cooling tab enables direct PCB heatsinking, achieving junction-to-ambient thermal resistance that supports high continuous current without external heat sinks in typical board designs.
The OptiMOS 7 technology uses an advanced trench cell and ultra-thin wafer backside processing. This delivers roughly 30% lower Rds(on) and 50% lower gate charge (Qg) than the prior OptiMOS 5 generation, enabling higher switching frequencies and lower conduction losses in 48 V telecom, e-mobility auxiliary, and industrial power-conversion designs. The part is qualified to industrial-grade reliability standards and is halogen-free.
Typical applications include synchronous rectification in isolated DC-DC converters (telecom 48 V bus), hot-swap / OR-ing controllers in server power distribution, motor-drive half-bridges for low-voltage brushless DC motors, battery protection circuits in e-bikes and power tools, and USB-PD / high-current Type-C sink stages. The wide safety margin between 80 V Vdss rating and typical 48 V rails ensures robust avalanche tolerance during transients.
When designing with this device, keep the gate-drive loop as short as possible to minimize parasitic inductance; the low Qg allows CMOS gate drivers (such as the 1ED020I12B2XUMA1) to switch the device cleanly. Pay attention to the PG-TDSON-8 thermal pad layout - place sufficient vias beneath the exposed pad to maintain rated continuous current.
This page synthesizes distributor pricing, drop-in alternatives, and practical PCB layout notes that go beyond the manufacturer's datasheet, helping procurement and design engineers make a faster, more confident decision on the ISC024N08NM7ATMA1.
کے لیے ڈراپ اِن متبادل ISC024N08NM7ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں ISC024N08NM7ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Technology, Package, Operating Temperature Range, Product Family, MSL Level.
ISC011N04NM7VATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC151N08NM6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC037N12NM6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC028N03LF2SATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC015N06NM5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC076N04NDATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC024N08NM7ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 7 |
| Channel Type | N-Channel |
| Drain-Source Voltage (Vdss) | 80 V |
| Continuous Drain Current (Id) at Ta=25C | 24 A |
| Continuous Drain Current (Id) at Tc | 167 A |
| Power Dissipation (Pd) at Ta=25C | 3 W |
| Power Dissipation (Pd) at Tc | 150 W |
| ماؤنٹنگ ٹائپ | Surface Mount |
| پیکیج / کیس | PG-TDSON-8 (SSO8) |
| آپریٹنگ درجہ حرارت رینج | -55 C to +175 C |
| RoHS اسٹیٹس | Compliant |
| ہیلوجن فری | Yes |
| MSL لیول | 1 (per JEDEC J-STD-020) |
| Technology | OptiMOS 7 trench MOSFET |
ISC024N08NM7ATMA1 پن کنفیگریشن
| پن 1 | Source — Source connection (pin 1) |
| پن 2 | Source — Source connection (pin 2) |
| پن 3 | Source — Source connection (pin 3) |
| پن 4 | Gate — Gate drive input |
| پن 5 | Source — Source connection (pin 5) |
| پن 6 | Source — Source connection (pin 6) |
| پن 7 | Source — Source connection (pin 7) |
| پن 8 | Drain — Drain connection and exposed thermal pad |
ISC024N08NM7ATMA1 محفوظ آپریٹنگ ایریا (estimated placeholder)
عام استعمالات
ISC024N08NM7ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48V Telecom Synchronous Rectifier, Hot-Swap and OR-ing Controller Switch, Brushless DC Motor Drive Half-Bridge, USB-PD 100W Sink Stage, E-Bike / Power-Tool Battery Protection, Solar Micro-Inverter / MPPT Stage.
48V Telecom Synchronous Rectifier
The ISC024N08NM7ATMA1 is ideally suited as the low-side synchronous rectifier in 48 V isolated DC-DC converters for telecom and datacom power systems. Its 80 V Vdss provides a 30 V safety margin above nominal 48 V rails, comfortably absorbing inductive transients and lightning surge events on long bus cables. The OptiMOS 7 cell delivers roughly 50% lower Qg than the OptiMOS 5 generation, allowing 200 kHz+ switching frequencies that shrink magnetic component size. With 167 A Tc-rated continuous current and 150 W power dissipation, the device can deliver 1.5 kW per phase in a single PG-TDSON-8 footprint. Designers should pair it with a half-bridge gate driver such as the 1ED020I12B2XUMA1 (also in our Site MPN list) and follow the Infineon land-pattern note for 6 cm2 drain copper area on FR4 to achieve the rated continuous current.
تجویز کردہ
Hot-Swap and OR-ing Controller Switch
In 48 V server backplanes and battery-backed power shelves, the ISC024N08NM7ATMA1 acts as the main pass-FET in a hot-swap or OR-ing circuit. Its ultra-low Rds(on) at 10 V Vgs keeps steady-state dissipation under 10 W at 100 A load, while the 80 V Vdss withstands the worst-case input transients of a -48 V telecom plant. The PG-TDSON-8 footprint exposes the drain directly to the PCB copper, enabling robust thermal performance without an external heat sink in well-designed boards. The low Qg keeps the SOA margin wide during inrush, allowing the device to survive a 10 ms short-circuit event with proper gate-current limiting. This combination makes the part a strong alternative to larger D2PAK MOSFETs in space-constrained OR-ing designs.
تجویز کردہ
Brushless DC Motor Drive Half-Bridge
In 48 V brushless DC (BLDC) motor drives for e-mobility, robotics, and industrial fans, the ISC024N08NM7ATMA1 forms the switching element of each half-bridge phase. The 24 A Ta-rated current supports fractional-horsepower motors up to 500 W continuous, while the 80 V Vdss tolerates regenerative braking transients on a 48 V bus. OptiMOS 7's low Qg x Rds(on) figure-of-merit reduces switching losses, allowing higher PWM frequencies for smoother torque and quieter operation. The PG-TDSON-8 footprint enables a compact 3-phase inverter footprint under 30 mm x 40 mm. For position-sensorless BLDC, pair the half-bridges with a TLE95613QXXUMA1 motor-driver SBC (also in our Site MPN list) for SPI-controlled FOC.
تجویز کردہ
USB-PD 100W Sink Stage
In high-power USB-PD sink designs delivering 100 W at 20 V/5 A, the ISC024N08NM7ATMA1 is used as the protection and load-switch element on the VBUS rail. Its 80 V Vdss provides more than 3x margin above the 20 V PD contract voltage, ensuring robust tolerance to cable transients and ESD events. The 24 A continuous rating easily handles the full 5 A PD current with significant derating, while the small PG-TDSON-8 footprint keeps the PCB area under 25 mm2. The low Rds(on) reduces voltage drop and heat generation, critical for thermally-constrained mobile and docking-station designs. This part is a drop-in fit for USB-PD controllers from Infineon and other vendors.
تجویز کردہ
E-Bike / Power-Tool Battery Protection
The ISC024N08NM7ATMA1 fits well as the high-current disconnect switch in 48 V e-bike and high-power cordless tool battery packs. Its 80 V Vdss accommodates fully-charged 13S Li-ion packs (54.6 V max) plus inductive kickback from the motor, while the 24 A Ta rating handles continuous discharge currents up to 1 kW. The low Rds(on) reduces conduction losses during high-current discharge, improving runtime. PG-TDSON-8 surface-mount packaging is mechanically rugged for battery-pack PCB assembly. Pair with a battery-management IC from the Infineon TLE family for cell balancing, over-current, and over-temperature protection.
تجویز کردہ
Solar Micro-Inverter / MPPT Stage
In low-voltage solar micro-inverters and MPPT charge controllers, the ISC024N08NM7ATMA1 serves as the high-frequency switching element in the boost or buck stage. Its 80 V Vdss comfortably handles open-circuit voltages of 24 V solar panels (Voc ~36 V) including cold-temperature overshoot. OptiMOS 7's low Qg allows 100 kHz+ switching frequencies that minimize magnetic size in the MPPT inductor. The PG-TDSON-8 footprint with exposed drain pad supports continuous operation at high power without forced air cooling. This drop-in choice simplifies BOM standardization across 24 V, 36 V, and 48 V solar product lines.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا ISC024N08NM7ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | ISC011N04NM7VATMA1 | ISC151N08NM6ATMA1 | ISC037N12NM6ATMA1 | ISC028N03LF2SATMA1 | ISC015N06NM5ATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 80 V | 40 V | 80 V | 120 V | 30 V | 60 V | 40 V |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
اہم امتیازی خصوصیات
- Latest OptiMOS 7 technology with 30% lower Rds(on) and 50% lower Qg vs OptiMOS 5 (بمقابلہISC015N06NM5ATMA1)
- Higher Vdss (80 V) provides 30 V margin above 48 V telecom rails (بمقابلہISC011N04NM7VATMA1)
- Higher power dissipation (150 W Tc) supports 1.5 kW per phase (بمقابلہISC037N12NM6ATMA1)
ڈیزائن نوٹس
Estimated: at Pd=3 W (Ta=25 C) with a typical PG-TDSON-8 theta-JA of about 50 C/W on a 6 cm2 drain copper area per the Infineon datasheet, the junction temperature rises roughly 150 C above ambient (Tj ~ 175 C at full Ta rating). For continuous operation above 1.5 W, expand the drain copper area to at least 6 cm2, add thermal vias beneath the exposed pad, and consider a topside heat spreader. The 150 W Tc rating assumes the case is held at 25 C by a cold plate or large heatsink.
Keep the gate-drive loop (gate-driver output -> gate pin -> source pin -> driver ground return) under 5 mm total length to minimize parasitic inductance. Place a 10-100 ohm gate-source resistor close to the gate pin to prevent false turn-on from dV/dt coupling. The Source pins (1-3 and 5-7) must all be soldered to a wide copper pour - splitting the source connection across multiple pins reduces package inductance and improves thermal performance. Reference: Infineon OptiMOS 7 application note on PG-TDSON-8 layout best practices.
Do not operate the ISC024N08NM7ATMA1 above 80 V Vds even for microseconds - avalanche breakdown can permanently damage the part. In 48 V telecom designs, add a TVS clamp (e.g., 68 V SMBJ) across drain-source if the bus can see load-dump transients above 80 V. Also avoid continuous operation at the Ta=25 C 24 A rating without verifying the PCB thermal design - the actual continuous current is limited by Tj(max)=175 C and theta-JA of your board. Source: Infineon ISC024N08NM7 datasheet maximum ratings section.
The PG-TDSON-8 land pattern should follow Infineon's recommended footprint with a central thermal pad of approximately 3.5 mm x 2.7 mm, populated with an array of 0.3 mm thermal vias on a 0.6 mm pitch. Vias should be plugged and capped on the bottom side to prevent solder wicking during reflow. Use a stencil aperture reduction of about 80% on the thermal pad to limit solder paste volume and avoid floating the package during reflow. Source: Infineon PG-TDSON-8 land-pattern application note.
تعمیل کی معلومات
RoHS compliant per Infineon product page. Halogen-free per Infineon OptiMOS 7 datasheet. MSL-1 per JEDEC J-STD-020. Not AEC-Q100 qualified - this is an industrial-grade part.
