BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon
MPN: BSC033N08NS5SCATMA1 ✓ Hoạt độngBSC033N08NS5SCATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used in switching power supplies, motor drives, and load management. It belongs to the broader hierarchy of discrete power semiconductors (MOSFET -> transistor -> semiconductor -> electronic component) and is the workhorse of synchronous rectification and DC-DC conversion. Low on-resistance (RDS(on)) translates directly into lower conduction losses, higher efficiency, and reduced thermal stress.
Key features of the BSC033N08NS5SCATMA1 include 3.3 mOhm typical RDS(on) at VGS=10 V, an ultra-low RthJC of 0.86 K/W thanks to dual-side cooling, 100% avalanche-tested ruggedness, and a logic-level gate threshold compatible with 10 V drive. The SuperSO8 DSC footprint exposes both top and bottom thermal paths, enabling PCB layouts that sink heat through the drain tab and through the source pins simultaneously.
The OptiMOS 5 trench process minimizes gate charge (Qg) and output capacitance (Coss), reducing switching losses at high frequencies. Combined with the 80 V drain-source rating, the device targets 48 V bus telecom, eMobility, and industrial SMPS applications where both efficiency and power density are critical.
Typical applications include synchronous rectification in 48 V telecom DC-DC converters, hot-swap and OR-ing controllers in server power distribution, motor-drive H-bridges for power tools and e-bikes, and battery protection in industrial UPS systems. The wide safe operating area and avalanche rating make it well-suited for harsh environments with inductive loads.
Designers should pay attention to PCB layout: the SuperSO8 DSC package requires thermal vias beneath the exposed pad and a copper pour on both sides of the board to leverage the dual-cooling advantage. Gate-drive design must respect the maximum VGS rating of +/-20 V; a dedicated gate-driver IC such as the EiceDRIVER family is recommended over a microcontroller GPIO for switching frequencies above 100 kHz.
Bộ thay thế dễ dàng lắp đặt cho BSC033N08NS5SCATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC033N08NS5SCATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Drain-Source Voltage (VDS), MSL Level, Part Number.
BSC040N08NS5ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC052N08NS5ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC123N08NS3GATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC027N06LS5ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC033N08NS5SCATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (Tc) | 144 A |
| Power Dissipation (Tc) | 136 W |
| RDS(on) max @ VGS=10V | 3.3 mOhm |
| Gate-Source Voltage (VGS) | +/- 20 V |
| Thermal Resistance RthJC | 0.86 K/W |
| Hộp | PG-WSON-8-2 (SuperSO8 DSC) |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | -55C to +175C |
| Technology | Trench (OptiMOS 5) |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 |
Cấu hình chân BSC033N08NS5SCATMA1
| Chân 1 | S — Source |
| Chân 2 | S — Source |
| Chân 3 | S — Source |
| Chân 4 | G — Gate |
| Chân 5 | D — Drain (exposed pad) |
| Chân 6 | D — Drain |
| Chân 7 | D — Drain |
| Chân 8 | D — Drain |
Khu vực hoạt động an toàn (SOA)
Ứng dụng tiêu biểu
BSC033N08NS5SCATMA1 phù hợp cho 6 Áp dụngs: 48V Telecom Synchronous Rectification, Hot-Swap and OR-ing in Server Power Distribution, Motor Drive H-Bridges for Power Tools, Battery Protection in Industrial UPS, eBike / Light EV Powertrain, Solar Inverter DC-DC Stage.
48V Telecom Synchronous Rectification
The BSC033N08NS5SCATMA1 is ideally suited for the synchronous-rectifier (SR) MOSFET position in 48 V telecom isolated DC-DC converters (e.g. quarter-brick or eighth-brick modules converting 48 V to 3.3 V/12 V at 30-60 A). The 80 V VDS rating provides ~67% margin above the 48 V nominal bus, comfortably absorbing transient spikes from upstream OR-ing or hot-swap events. The 3.3 mOhm RDS(on) at VGS=10 V keeps conduction losses below 5 W at 40 A load, while the 0.86 K/W RthJC and dual-side cooling allow continuous 144 A operation without external heatsinks beyond PCB copper. The low Qg and Coss of the OptiMOS 5 process minimize switching losses at 200-500 kHz switching frequencies typical of modern telecom bricks.
Được đề xuất
Hot-Swap and OR-ing in Server Power Distribution
In 48 V server power-distribution backplanes, the BSC033N08NS5SCATMA1 functions as the main MOSFET in hot-swap controllers and OR-ing diodes. Its 144 A continuous drain current (Tc) and 136 W power dissipation rating handle inrush currents during board insertion while the low RDS(on) minimizes steady-state voltage drop across the protection element. The OptiMOS 5 avalanche rating provides ruggedness against inductive kickback when the load is suddenly disconnected. The SuperSO8 DSC package's 0.86 K/W RthJC enables compact blade-server layouts where board-to-board airflow is limited, while the dual-cooling paths (top exposed pad + bottom source tabs) keep junction temperatures below 100 C at 80 A continuous load.
Được đề xuất
Motor Drive H-Bridges for Power Tools
The BSC033N08NS5SCATMA1 serves as the low-side and high-side switch in 36 V / 48 V cordless power-tool H-bridge motor drives (drill, impact driver, leaf-blower). The 3.3 mOhm RDS(on) reduces I²R losses during high-torque bursts where motor currents can reach 80-120 A peak, extending battery runtime by 8-12% versus 5 mOhm-class MOSFETs. The 80 V VDS handles the back-EMF of BLDC motors at full speed without avalanche, while the OptiMOS 5 process delivers fast switching edges for 25-50 kHz PWM frequencies used in field-oriented control. The SuperSO8 DSC package fits within the compact motor-control PCBs typical of handheld tools while sustaining high current in continuous-pulse operation.
Được đề xuất
Battery Protection in Industrial UPS
In 48 V industrial UPS systems, the BSC033N08NS5SCATMA1 functions as the disconnect MOSFET between the battery bank and the DC bus. The 144 A continuous drain current supports large battery packs delivering 50-100 A continuous with 500 A peak during inverter startup. The 3.3 mOhm RDS(on) at full load keeps voltage drop across the protection switch below 350 mV, preserving battery capacity and reducing heat-sinking requirements. The device's wide operating temperature range (-55 C to +175 C) and Infineon's automotive-grade OptiMOS 5 reliability make it suitable for harsh industrial environments including outdoor telecom cabinets and factory-floor UPS installations.
Được đề xuất
eBike / Light EV Powertrain
For light electric vehicles (eBikes, e-scooters, neighborhood EVs) operating on 36 V / 48 V battery packs, the BSC033N08NS5SCATMA1 acts as the controller-side switch in the motor inverter and as the main battery disconnect. The 80 V rating handles the 48 V nominal pack plus regenerative-braking voltage transients with substantial safety margin. At 3.3 mOhm RDS(on) and 144 A capability, it delivers up to 7 kW peak motor power within a compact SuperSO8 DSC footprint. The dual-side cooling package supports the high peak-to-average current ratios typical of vehicle acceleration profiles, where junction temperature can swing 40-60 C within a single drive cycle.
Được đề xuất
Solar Inverter DC-DC Stage
In solar micro-inverters and string inverters, the BSC033N08NS5SCATMA1 can be used as the high-side or low-side switch in the DC-DC boost stage following the MPPT controller. The 80 V rating accommodates battery-coupled PV systems with 48 V battery bus plus transient margin. The 3.3 mOhm RDS(on) at 144 A delivers conversion efficiencies above 97% in 1-3 kW residential inverter designs. The OptiMOS 5 trench technology provides the low Qrr (reverse-recovery charge) needed to minimize switching losses when the MOSFET operates in continuous-conduction mode at 50-100 kHz switching frequency.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC033N08NS5SCATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC040N08NS5ATMA1 | BSC052N08NS5ATMA1 | BSC123N08NS3GATMA1 | BSC027N06LS5ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-WSON-8-2 (SuperSO8 DSC) | PG-WSON-8-2 (SuperSO8) - same footprint | PG-WSON-8-2 (SuperSO8) - same footprint | PG-WSON-8-2 (SuperSO8) - same footprint | PG-WSON-8-2 (SuperSO8) - same footprint |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 80 V | 80 V | 60 V |
| Continuous Drain Current (Tc) | 144 A | ~130 A | ~100 A | ~50 A | ~100 A |
| RDS(on) max @ VGS=10V | 3.3 mOhm | 4.0 mOhm | 5.2 mOhm | 12.3 mOhm | 2.7 mOhm |
| Power Dissipation (Tc) | 136 W | ~110 W | ~90 W | ~70 W | 139 W |
| Thermal Resistance RthJC | 0.86 K/W | ~1.1 K/W | ~1.4 K/W | ~1.8 K/W | 0.85 K/W |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | OptiMOS 3 (Trench) | OptiMOS 5 (Trench) |
Bảo phân biệt quan trọng
- Dual-side cooling (DSC) SuperSO8 package with 0.86 K/W RthJC (vsBSC040N08NS5ATMA1)
- Lowest RDS(on) in the 80V SuperSO8 family at 3.3 mOhm (vsBSC052N08NS5ATMA1)
- OptiMOS 5 generation with lower Qg and Qrr than OptiMOS 3 parts (vsBSC123N08NS3GATMA1)
Ghi chú thiết kế
Estimated: At continuous 100 A load with RDS(on)=3.3 mOhm, conduction loss is approximately 33 W. With the SuperSO8 DSC package's RthJC of 0.86 K/W, the junction-to-case temperature rise is about 28 C. For continuous operation above 80 A, place thermal vias directly beneath the exposed pad (0.3 mm pitch, filled or plugged) and use 2 oz copper on both top and bottom layers to leverage the dual-cooling paths. A junction-temperature calculation should subtract ambient and add heatsink RthJA; aim for Tj(max) below 125 C for reliable long-term operation.
The SuperSO8 DSC package exposes the drain tab on the top surface and bottom thermal pad. Route the high-current drain connection on the top layer through wide copper pours (at least 50 mm wide for 100 A), and place thermal vias in a 0.5 mm grid pattern under the bottom pad. Source pins should also be connected to a wide copper pour on the opposite side. Keep gate-trace length below 10 mm and route it away from drain switching nodes to minimize parasitic gate-drive oscillation. Use a 10 Ohm gate-source resistor to dampen ringing on long gate paths.
Do not exceed VGS=+/-20 V; use a dedicated gate-driver IC (such as the Infineon EiceDRIVER family) instead of a microcontroller GPIO for switching frequencies above 50 kHz. The BSC033N08NS5SCATMA1's 80 V VDS rating must be derated for dynamic transients in 48 V telecom systems - add at least 20% margin for inductive kickback. When paralleling multiple MOSFETs, ensure symmetrical gate-drive paths and matched source-inductance layouts; otherwise current sharing becomes unbalanced at high di/dt. Finally, always check avalanche rating (EAS) when designing with inductive loads.
Place the gate-driver IC within 5 mm of the MOSFET gate pin to minimize gate-loop inductance. Use a kelvin-source connection if available in the package variant; otherwise tie the gate-driver return directly to the source pad adjacent to pin 4 rather than to a remote ground. Add a 100 nF ceramic bypass capacitor between VCC of the gate driver and the local source return to suppress supply ringing. For the synchronous-rectifier position in a half-bridge, add a small RC snubber (10 Ohm + 1 nF) across drain-source to suppress voltage spikes during dead-time.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - refer to IAUT300N08S5N011ATMA1 for automotive-grade equivalent in same family.
