IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET
MPN: IAUT300N08S5N011ATMA1 ✓ Hoạt độngIAUT300N08S5N011ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used for high-efficiency power conversion. The IAUT300N08S5N011ATMA1 belongs to the N-channel enhancement-mode family, a subset of power MOSFETs that conducts when a positive gate-source voltage is applied. Within the broader power-semiconductor hierarchy, it sits under: MOSFET -> discrete semiconductor -> power management component. The "automotive" prefix ("AU") and the Infineon OptiMOS 5 designation indicate AEC-Q101 qualification, optimized for 48 V board-net applications where lowest conduction loss and high inrush current capability are required.
Key specifications include a continuous drain current of 300 A, pulsed drain current of 410 A (limited by thermal and bonding constraints), 375 W power dissipation at T<sub>C</sub> = 25 C, and a threshold voltage V<sub>GS(th)</sub> of 3.8 V. The input capacitance C<sub>iss</sub> is 16.25 nF, output capacitance C<sub>oss</sub> is 2.6 nF, and reverse transfer capacitance C<sub>rss</sub> is 130 pF, with a total gate charge Q<sub>g</sub> of 231 nC at 10 V V<sub>GS</sub>. These switching figures, combined with 1.1 mOhm on-resistance, make the device well-suited for high-frequency switching at very high current levels.
Built on Infineon's OptiMOS 5 trench technology, the device achieves best-in-class figure-of-merit (R<sub>DS(on)</sub> x Q<sub>g</sub>) for the 80 V class. The PG-HSOF-8-1 (TOLL 10x12) package exposes the drain tab directly to the PCB copper, giving very low thermal resistance and enabling 375 W power handling when properly soldered to a sufficiently large copper thermal pad.
Typical applications include 48 V automotive systems such as mild-hybrid inverter stages, high-current DC-DC converters, BLDC motor drives for e-mobility, electric power steering (EPS), and battery protection disconnects. The low R<sub>DS(on)</sub> directly reduces conduction loss, improving overall drive-train efficiency and thermal headroom.
When designing with this part, ensure the PCB thermal pad layout follows Infineon's PG-HSOF-8-1 footprint guidelines to achieve the rated thermal performance. Gate-drive design must account for the 231 nC Q<sub>g</sub>; a 10 Ohm gate resistor is typically recommended to limit ringing and dv/dt-induced turn-on.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IAUT300N08S5N011ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUT300N08S5N011ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), RoHS Compliance.
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| FET Type | N-Channel |
| Technology | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (V_DS) | 80 V |
| Continuous Drain Current (I_D, T_C=25C) | 300 A |
| Pulsed Drain Current (I_DM) | 410 A (Tj) |
| R_DS(on) max | 1.10 mOhm at V_GS=10 V |
| Gate Threshold Voltage (V_GS(th)) | 3.8 V |
| Total Gate Charge (Q_g) | 231 nC at V_GS=10 V |
| Input Capacitance (C_iss) | 16.25 nF |
| Output Capacitance (C_oss) | 2.6 nF |
| Reverse Transfer Capacitance (C_rss) | 130 pF |
| Power Dissipation (P_D) | 375 W at T_C=25C |
| Khoảng nhiệt độ hoạt động | -55C to +175C |
| Hộp | PG-HSOF-8-1 (TOLL 10x12 mm) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 1 |
| Qualification | Automotive (AEC-Q101) |
Cấu hình chân IAUT300N08S5N011ATMA1
| Chân 1 | Gate — Gate drive input (G) |
| Chân 2 | Drain — Drain tab / thermal pad (D) |
| Chân 3 | Drain — Drain tab / thermal pad (D) |
| Chân 4 | Drain — Drain tab / thermal pad (D) |
| Chân 5 | Source — Source connection (S) |
| Chân 6 | Source — Source connection (S) |
| Chân 7 | Source — Source connection (S) |
| Chân 8 | Source — Source connection (S) |
Khu vực hoạt động an toàn (DC, T_C=25C)
Ứng dụng tiêu biểu
IAUT300N08S5N011ATMA1 phù hợp cho 6 Áp dụngs: 48V Mild-Hybrid Inverter Power Stage, 48V-to-12V DC-DC Converter, Electric Power Steering (EPS), Battery Management System Disconnect Switch, BLDC Motor Drive for E-Mobility, Industrial High-Current Switching.
48V Mild-Hybrid Inverter Power Stage
The IAUT300N08S5N011ATMA1's 80 V V_DS rating, 300 A continuous current, and 1.10 mOhm R_DS(on) directly suit the main inverter of 48 V mild-hybrid electric vehicles. It switches the traction motor windings at high frequency with minimum conduction loss, improving overall drive-cycle efficiency and reducing battery drain. The AEC-Q101 automotive qualification and PG-HSOF-8-1 (TOLL 10x12) surface-mount package with low thermal resistance allow PCB-mount integration at the inverter housing without elaborate cooling. Designers typically parallel two devices per phase to halve conduction loss and share the 410 A pulsed surge.
Được đề xuất
48V-to-12V DC-DC Converter
Buck or buck-boost converters stepping 48 V down to 12 V for legacy 12 V automotive loads benefit from the IAUT300N08S5N011ATMA1's low 1.10 mOhm on-resistance and 80 V rating. Placed in the high-side switch position, the device sustains continuous current up to 300 A at moderate switching frequencies (50-200 kHz), enabling high power density (>4 kW/L) converter modules. The 231 nC total gate charge balances switching loss against conduction loss. Designers should follow Infineon's PG-HSOF-8-1 PCB layout for the copper thermal pad, which keeps junction temperature in check at sustained >200 A loads.
Được đề xuất
Electric Power Steering (EPS)
Electric power steering units require a robust, AEC-Q101-qualified MOSFET for the BLDC motor inverter that drives the steering rack. The IAUT300N08S5N011ATMA1's 300 A continuous current rating handles peak EPS assist loads during parking maneuvers, while the 1.10 mOhm R_DS(on) minimizes heat dissipation in the engine bay. The PG-HSOF-8-1 (TOLL 10x12) surface-mount package integrates cleanly onto the EPS ECU PCB, and its -55C to +175C operating temperature range covers under-hood thermal extremes. Harsh-vibration robustness comes from the package's bottom-source thermal pad and large solderable leads.
Được đề xuất
Battery Management System Disconnect Switch
In 48 V battery management systems (BMS), the IAUT300N08S5N011ATMA1 serves as a high-current solid-state disconnect switch between the lithium-ion pack and the vehicle bus. Its 80 V abs-max comfortably exceeds typical 48 V working voltage, and its 300 A continuous current handles peak regen-braking inrush. The 1.10 mOhm R_DS(on) keeps voltage drop below 330 mV at 300 A, preserving pack-to-bus efficiency. Bidirectional current flow (N-channel inherent body diode) simplifies the protection topology. AEC-Q101 and -55C to +175C ratings cover automotive under-hood conditions.
Được đề xuất
BLDC Motor Drive for E-Mobility
Brushless DC motor drives in e-mobility applications - electric water pumps, oil pumps, HVAC blowers, and cooling fans - use the IAUT300N08S5N011ATMA1 in a three-phase inverter topology. The 80 V rating handles inductive flyback comfortably, while 300 A continuous and 410 A pulsed current supports the locked-rotor inrush of pump and blower motors. The 1.10 mOhm R_DS(on) keeps the inverter cold at high duty cycles, extending motor winding life. PG-HSOF-8-1 (TOLL 10x12) surface-mount packaging supports automated PCB assembly at automotive OEM scale.
Được đề xuất
Industrial High-Current Switching
Beyond automotive, the IAUT300N08S5N011ATMA1 fits industrial high-current switching such as 48 V telecom battery backup, server-rack 48 V distribution, and large-format lithium battery pack disconnects. Its 80 V abs-max and 300 A continuous current enable >20 kW load switching in a single device, reducing parts count. The 1.10 mOhm R_DS(on) minimizes conduction loss and bus voltage drop, while PG-HSOF-8-1 (TOLL) PCB-mount packaging simplifies thermal management. Operating junction temperature up to 175C suits industrial cabinet environments.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUT300N08S5N011ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUT300N08S5N012ATMA2 | BSC052N08NS5ATMA1 | BSZ110N08NS5ATMA1 | BSC117N08NS5ATMA1 | BSC023N08NS5SCATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-HSOF-8-1 (TOLL 10x12) | PG-HSOF-8-1 (TOLL 10x12) | PG-TSDSON-8 (5x6) | PG-TSDSON-8 (5x6) | PG-TSDSON-8 (5x6) | PG-TSDSON-8 (5x6) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| V_DS max | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V |
| Continuous Drain Current (T_C=25C) | 300 A | 300 A | 50 A | ~30 A | ~25 A | ~40 A |
| R_DS(on) max at V_GS=10V | 1.10 mOhm | 1.10 mOhm | 5.2 mOhm | 1.8 mOhm | 3.0 mOhm | 2.3 mOhm |
| Total Gate Charge Q_g | 231 nC | 231 nC | 39 nC | 85 nC | 105 nC | 55 nC |
| Power Dissipation | 375 W | 375 W | 139 W | 138 W | 139 W | 125 W |
| Automotive Qualified (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
| Operating Temperature | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C |
Bảo phân biệt quan trọng
- Industry-lowest 1.10 mOhm R_DS(on) at 80 V in TOLL package (vsBSC052N08NS5ATMA1)
- Same-family pin compatibility for parallel operation (vsIAUT300N08S5N012ATMA2)
- AEC-Q101 automotive qualified with MSL 1 (vsBSZ110N08NS5ATMA1)
Ghi chú thiết kế
At 300 A continuous drain current in a 48 V automotive inverter, power dissipation reaches approximately 99 W at full load (I^2 x R_DS(on) = 300^2 x 0.0011 = 99 W). The PG-HSOF-8-1 (TOLL 10x12) package requires a substantial copper thermal pad (>= 25 mm^2 top + bottom layer with thermal vias) to keep junction rise below 100 C. Estimated: at T_A=85C and R_thJA ~= 0.4 C/W with proper layout, junction stays near 125C at 99 W, within the 175C max. Below 100 A continuous the device can run without forced-air cooling if the PCB copper pad is sized per Infineon AN-2020-001.
Layout for the PG-HSOF-8-1 (TOLL) footprint is critical. Place multiple thermal vias (>= 0.3 mm diameter, 1.0 mm pitch) directly under the central drain tab to the inner copper layers. Keep the high-current source copper (pins 5-8) as wide and short as possible to minimize parasitic inductance. Use a Kelvin-source connection by routing pin 5 separately back to the gate-driver GND to prevent source-inductance-induced gate ringing.
Gate-drive loop inductance must be minimized to limit dv/dt-induced ringing on the gate. Use a 10 Ohm gate-source resistor (R_G) plus a 100 kohm pull-down resistor from gate to source to keep the device off during start-up. The 231 nC total gate charge requires a peak gate current of ~500 mA at 1 A driver strength - use a dedicated gate-driver IC such as the 1EDB7275FXUMA1 rather than a logic-level output.
Do not exceed V_GS=+/-20 V absolute maximum, even transiently. Always place a 100 kohm pull-down on the gate so the device stays off if the gate-driver fails open. Watch for body-diode reverse-recovery (Q_rr) in bridge-tie configurations; the OptiMOS 5 process mitigates this but synchronous-rectifier dead-time still needs to be tuned.
Thông tin tuân thủ
AEC-Q101 automotive qualified (AEC-Q100 family for MOSFETs). MSL 1 rated per distributor data. RoHS and halogen-free compliance per Infineon product page. REACH compliance confirmed via DigiKey listing.
