BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon
MPN: BSS127H6327XTSA2 ✓ نشطBSS127H6327XTSA2 نظرة عامة
A small-signal MOSFET is a metal-oxide-semiconductor field-effect transistor scaled for low-current switching and analog signal conditioning, occupying the boundary between discrete discrete semiconductors and power-management ICs. SIPMOS (Siemens/Infineon Power MOS) is Infineon's planar vertical-DMOS process family optimized for high breakdown voltage and fast switching in compact surface-mount packages. Within the broader taxonomy, the BSS127 sits at: N-channel MOSFET -> small-signal MOSFET -> discrete semiconductor -> power semiconductor, serving as a building block in low-current high-voltage analog front ends.
The BSS127's 600 V drain-source breakdown and 4.5 V VGS(th) make it ideal for direct microcontroller or 5 V logic interface in solid-state relay (SSR) front-ends, high-side bootstrap drivers, and line-side voltage clamps. Its SIPMOS construction provides a low Crss/Ciss ratio that simplifies gate-drive timing and minimizes shoot-through losses in half-bridge or totem-pole stages. The 21 mA continuous current rating suits signal-level loads such as optocouplers, low-power relays, and piezo transducers, while the 500 mW power rating limits pulsed dissipation to short-duration switching events.
Typical applications include solid-state relay (SSR) input/output stages, high-voltage signal multiplexing, line-voltage interface circuits in white goods and industrial controls, automotive sensor interfaces, and as a low-side switch in flyback or buck converter housekeeping blocks. The AEC-Q101 automotive qualification supports deployment under-the-hood and in body-electronics modules operating across -40 C to +150 C junction temperature.
When designing with the BSS127, gate-source protection with a 10 kohm pull-down resistor is recommended to prevent inadvertent turn-on from dv/dt coupling. Total gate charge Qg should be sourced from a sufficiently stiff driver to keep switching losses bounded; consult the manufacturer's datasheet for the typical application circuit and thermal derating curves.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
بدائل مباشرة لـ BSS127H6327XTSA2 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع BSS127H6327XTSA2 (نفس عامل الشكل والبصمة) — يختلف في Package, FET Type, Operating Temperature Range, Technology, MSL Level.
BSS127S-7
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
BSS87H6327FTSA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←BSS123IXTSA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←BSS192PH6327FTSA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←BSL308CH6327XTSA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←BSD235CH6327XTSA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←BSS127H6327XTSA2 الحدود القصوى والخصائص الكهربائية
| FET Type | N-Channel SIPMOS, enhancement mode |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 21 mA (Ta) |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (logic level, rated) |
| On-State Resistance (RDS(on)) max | 500 ohm at ID = 21 mA |
| Total Power Dissipation (Ptot) | 500 mW (Ta) |
| درجة حرارة الوصلة التشغيلية | -55 C to +150 C |
| العلبة | SOT-23-3 (PG-SOT23) |
| نوع التركيب | Surface Mount |
| عدد الأطراف | 3 |
| dv/dt Rated | Yes |
| Automotive Qualification | AEC-Q101 |
| حالة RoHS | Compliant (lead-free) |
| خالٍ من الهالوجين | Yes, per IEC 61249-2-21 |
تكوين أطراف BSS127H6327XTSA2
| دبوس 1 | GATE — Gate input (logic-level, 4.5 V threshold) |
| دبوس 2 | SOURCE — Source terminal (connected to ground in low-side switch) |
| دبوس 3 | DRAIN — Drain terminal (high-voltage node, up to 600 V) |
منطقة التشغيل الآمن (DC)
التطبيقات النموذجية
BSS127H6327XTSA2 مناسب لـ 6 التطبيقs: Solid-State Relay (SSR) Front-End, High-Voltage Line-Side Interface, Automotive Sensor Interface Module, Piezo Transducer Driver, Household Appliance Control Board, Industrial Control Signal Multiplexer.
Solid-State Relay (SSR) Front-End
The BSS127H6327XTSA2's 600 V drain-source breakdown and 4.5 V logic-level gate threshold make it ideal for the input stage of solid-state relays switching rectified 230 V AC or 400 V DC loads. Its 21 mA continuous drain current drives optocoupler LED inputs or low-power trigger circuits without external current limiting, while the dv/dt ruggedness rating prevents false triggering from line transients. Place the BSS127 between the line voltage and the gate driver network; a 10 kohm gate-source pull-down resistor prevents inadvertent turn-on during MCU reset. Compared to a 600 V bipolar transistor front-end, the BSS127's near-zero input current simplifies the microcontroller side and removes the need for a base-current limiting resistor.
موصى به
High-Voltage Line-Side Interface
The BSS127H6327XTSA2 serves as a robust interface between low-voltage microcontroller GPIO and line-voltage (110 V AC to 240 V AC) signal conditioning networks. Its 600 V VDS rating withstands rectified line transients, and the 4.5 V VGS(th) allows direct MCU drive without a level shifter. Use it as a high-side bleed switch to discharge X-capacitor safety bleeder resistors when AC is disconnected, or as a low-side clamp in zero-cross detection circuits. Compared to a discrete 600 V BJT front-end, the BSS127's voltage-controlled gate eliminates base-current draw and improves switching symmetry across the AC cycle.
موصى به
Automotive Sensor Interface Module
The BSS127H6327XTSA2's AEC-Q101 qualification makes it suitable for automotive sensor interfaces, body-electronics modules, and HVAC controls operating across -40 C to +150 C junction temperature. Its 21 mA ID rating drives sensor excitation currents for thermistor or hall-effect signal conditioning, while the 600 V VDS provides ample margin for 12 V/24 V automotive load-dump transients. Pair the BSS127 with a 5 V MCU GPIO for direct gate drive in sensor multiplexing or low-side switch positions. Compared to non-automotive-qualified SOT-23 MOSFETs, the BSS127H6327XTSA2 delivers proven reliability under H3TRB and temperature-cycle stress per AEC-Q101.
موصى به
Piezo Transducer Driver
The BSS127H6327XTSA2's high VDS rating and small SOT-23 package suit piezo transducer and buzzer driver circuits in industrial control panels and consumer appliances. Its 21 mA continuous current drives low-power piezo elements for audible feedback, while the 600 V breakdown supports piezo transformers in CCFL backlight or ozone-generator applications. Drive the gate from a 5 V logic output through a 1 kohm series resistor to limit ringing from piezo capacitance. Compared to a 600 V BJT driver, the BSS127's voltage-controlled gate enables cleaner switching edges and lower harmonic distortion in audio-frequency piezo applications.
موصى به
Household Appliance Control Board
The BSS127H6327XTSA2 fits white-goods and household appliance control boards as a low-current signal switch for relay coil drivers, status LEDs, and user-interface sense lines. Its 600 V VDS withstands inductive kickback from 12 V or 24 V relay coils when properly clamped, while the logic-level gate drives directly from appliance microcontroller GPIO. Use it as a low-side switch for relay coils or as a high-side enable for optoisolated triac drivers. Compared to electromechanical relays in the same role, the BSS127 eliminates coil inrush current and provides silent, arc-free switching for appliance user-interface circuits.
موصى به
Industrial Control Signal Multiplexer
The BSS127H6327XTSA2 acts as an analog signal multiplexer switch in industrial process-control and PLC input modules, where its 600 V VDS and 21 mA ID rating handle 4-20 mA current loops and 0-10 V analog signals with margin. Its low on-state resistance of 500 ohm typical introduces minimal insertion loss for low-level analog signals, while the small SOT-23 package enables high-channel-density multiplexer designs on compact PLC cards. Pair the BSS127 with a precision op-amp buffer to build a 4-channel or 8-channel analog input multiplexer. Compared to electromechanical reed relays, the BSS127 delivers faster switching, longer operational life, and lower power consumption in continuous-operation industrial applications.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ BSS127H6327XTSA2 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | BSS127S-7 | BSS87H6327FTSA1 | BSS123IXTSA1 |
|---|---|---|---|---|
| Brand | Infineon | Diodes Incorporated | Infineon | Infineon |
| Package | SOT-23-3 (PG-SOT23) | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| Channel Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
أبرز الفروقات
- Highest VDS rating in SOT-23-3 logic-level class (مقابلBSS87H6327FTSA1)
- AEC-Q101 automotive qualification at lowest unit price (مقابلBSS127S-7)
- Logic-level VGS(th) compatible with 5V MCU direct drive (مقابلBSS123IXTSA1)
ملاحظات التصميم
Mount the BSS127H6327XTSA2 with the SOT-23 tab connected to the drain (pin 3). For 600 V applications, maintain a minimum creepage distance of 1.5 mm between drain pad and any low-voltage trace to comply with IEC 60950 / IEC 62368 clearance requirements. The SOT-23 thermal pad should be soldered to a small copper pour (>= 25 mm^2) to limit junction temperature rise at the 21 mA continuous rating; at 500 mW Ptot and theta_JA of approximately 320 C/W on a 1 oz copper FR-4 board, the junction rises about 80 C above ambient at full load, leaving headroom to 150 C Tj max.
The BSS127H6327XTSA2 is a small-signal MOSFET rated at 21 mA, not a power MOSFET - do not use it as a load switch for currents above ~50 mA pulsed or 21 mA continuous. Exceeding the SOA curve causes thermal runaway and device failure. For load switching above 0.5 A, choose a dedicated power MOSFET such as the BSZ070N08LS5ATMA1 or BSC0906NSATMA1 instead. The 600 V VDS rating is intended for high-voltage signal conditioning, not power conversion - verify SOA at your specific VDS/ID combination before deployment.
Place a 10 kohm gate-source pull-down resistor as close as possible to the gate pin to prevent dv/dt-induced turn-on during fast drain-voltage transitions. Keep the gate trace short (< 5 mm) and route it away from the drain node to minimize parasitic feedback capacitance. For SSR applications, add a small ferrite bead or 100 ohm resistor in series with the gate to dampen ringing from the optocoupler capacitance. Refer to Infineon application note 'SIPMOS Small-Signal MOSFETs in SSR Circuits' for reference layout patterns.
Estimated: At a 600 V drain transition with 5 ns rise time, the Miller capacitance Crss of approximately 1.5 pF injects a gate-voltage spike of about VGS_spike = VDS_dvdt * Crss / Ciss. With Ciss around 30 pF and dv/dt of 120 V/ns, the spike reaches about 6 V - above the 4.5 V threshold and potentially causing shoot-through. Add a gate-source capacitor (1 nF ceramic) to slow the turn-on edge to > 50 ns, suppressing dv/dt-induced turn-on without significantly increasing switching loss.
معلومات الامتثال
100% lead-free per Infineon datasheet. Halogen-free per IEC 61249-2-21. AEC-Q101 automotive qualified (note: AEC-Q101, not AEC-Q100; both are automotive reliability standards for discrete semiconductors and ICs respectively). dv/dt rated. RoHS and REACH compliant.
