IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon
MPN: IAUCN04S7L006ATMA1 ✓ Hoạt độngIAUCN04S7L006ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power electronics to convert and regulate electrical energy. N-channel MOSFETs like this one are the workhorses of modern synchronous rectification and motor drive topologies because their low on-resistance per unit area minimizes conduction loss. Within the broader taxonomy, this part belongs to the discrete semiconductor family: power MOSFET → N-channel enhancement MOSFET → logic-level gate MOSFET → automotive-grade MOSFET.
Key features include an ultra-low typical R_DS(on) of 0.6 mΩ at V_GS = 10 V, optimized for high-current 12 V automotive rails, a logic-level compatible gate threshold enabling direct drive from 3.3 V or 5 V microcontrollers without a gate-driver stage in some configurations, and a 175 °C maximum junction temperature that supports under-hood thermal environments. The PG-TDSON-8-43 package exposes the drain on the bottom thermal pad, providing a very low thermal resistance path to the PCB copper.
The device uses Infineon's advanced OptiMOS™-7 trench technology, which lowers both conduction and switching losses compared with previous generations. With reduced gate charge (Q_G) and low output capacitance, the part enables high-frequency PWM operation (typically 25-50 kHz for motor drives) without excessive switching loss. The combination of low R_DS(on) and small package footprint simplifies PCB layout by eliminating the need for bulky heat sinks in many 12 V applications.
Typical applications include BLDC motor drives in electric power steering and HVAC blowers, 12 V battery-disconnect switches and eFuse circuits, DC-DC converter synchronous rectifier stages, and reverse-battery protection circuits. The automotive-grade qualification also makes the part suitable for use in 48 V mild-hybrid systems on the low-voltage side.
When designing with this part, ensure the gate drive voltage reaches the full 10 V enhancement level under worst-case load transients to realize the datasheet R_DS(on). Also pay close attention to PCB layout: the PG-TDSON exposed pad must be soldered to a sufficiently large copper pour to achieve the rated thermal performance, and the source-sense connection (pin 2) should be tied to the source pad to avoid gate-oscillation.
This page synthesizes distributor pricing, drop-in automotive-grade alternatives, and practical PCB layout guidance not found in the manufacturer datasheet alone, helping engineers shorten their BOM-qualification cycle.
Bộ thay thế dễ dàng lắp đặt cho IAUCN04S7L006ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUCN04S7L006ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Series, Qualification.
IAUCN04S7N006ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUCN04S7N009ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUCN04S6N009TATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUC100N04S6L020ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUZN04S7L030ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUCN04S7L006ATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D) | 175 A |
| R_DS(on) Max | 0.6 mΩ at V_GS = 10 V |
| Khoảng nhiệt độ hoạt động | -55 °C to +175 °C |
| Hộp | PG-TDSON-8-43 |
| Kiểu lắp đặt | Surface Mount |
| Technology | OptiMOS-7 trench |
| Automotive Qualified | Yes (AEC-Q101) |
| Trạng thái RoHS | Compliant |
| Số chân | 8 |
| Packaging | Tape and Reel (ATMA1) |
| Polarity | Single N-Channel |
Cấu hình chân IAUCN04S7L006ATMA1
| Chân 1 | Source — Source connection (pin 1 of source bond group) |
| Chân 2 | Source (Kelvin) — Kelvin sense source for gate-drive return |
| Chân 3 | Source — Source connection |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Drain — Drain connection (top-side) |
| Chân 6 | Source — Source connection |
| Chân 7 | Source — Source connection |
| Chân 8 | Drain — Drain connection (top-side) |
Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
IAUCN04S7L006ATMA1 phù hợp cho 6 Áp dụngs: BLDC Motor Drive (Automotive 12 V), Battery-Disconnect Switch / eFuse, Synchronous Rectifier in DC-DC Converters, Reverse-Battery Protection Circuit, Electric Power Steering (EPS) High-Current Path, LED Headlight Driver Output Stage.
BLDC Motor Drive (Automotive 12 V)
The IAUCN04S7L006ATMA1 is ideal for three-phase BLDC motor inverter stages in 12 V automotive subsystems such as HVAC blowers, water pumps, and engine cooling fans. Its 0.6 mΩ R_DS(on) at V_GS = 10 V and 175 A continuous drain current provide ample margin for typical 30-80 A phase currents while minimizing conduction loss. The PG-TDSON-8-43 footprint with bottom-side drain pad enables direct PCB cooling through copper pours without a discrete heatsink, reducing BOM cost and assembly height. The part's AEC-Q101 qualification is mandatory for under-hood deployment.
Được đề xuất
Battery-Disconnect Switch / eFuse
Used as the main high-side switch in 12 V automotive battery-disconnect and eFuse circuits, the IAUCN04S7L006ATMA1 handles continuous currents up to 175 A and provides ultra-low 0.6 mΩ conduction loss, minimizing voltage drop and heat generation during steady-state load. Its 40 V V_DS rating tolerates 24 V jump-start events and load-dump transients up to ~35 V. The PG-TDSON-8-43 exposed drain pad simplifies thermal management on the PCB, allowing sustained operation at 100 A+ without additional heatsinking in well-designed 4-layer boards with 2 oz copper.
Được đề xuất
Synchronous Rectifier in DC-DC Converters
The IAUCN04S7L006ATMA1 serves as the low-side synchronous rectifier MOSFET in 12 V-input buck converters up to 50 A continuous output. With R_DS(on) of only 0.6 mΩ, conduction loss is dominated by I²R, keeping peak efficiency above 96% at full load. The OptiMOS-7 technology reduces gate charge versus older generations, enabling 200-500 kHz switching frequencies that shrink the inductor footprint. Designers should pair this part with a 60-100 V companion high-side FET for safety margin on the 12 V bus.
Được đề xuất
Reverse-Battery Protection Circuit
The IAUCN04S7L006ATMA1 is well-suited to reverse-battery protection in automotive ECUs, where it acts as a high-side disconnect switch that turns off under fault conditions to protect downstream electronics. The 40 V V_DS rating is sufficient for 24 V jump-start transients, and the 175 A continuous current rating supports the full load of a body-control module or gateway ECU. The PG-TDSON-8-43 exposed pad allows compact PCB layouts, and the part's AEC-Q101 qualification ensures long-term reliability under automotive temperature cycling.
Được đề xuất
Electric Power Steering (EPS) High-Current Path
In electric power steering systems, the IAUCN04S7L006ATMA1 can be used in the power-supply path that feeds the EPS motor controller, where its 0.6 mΩ on-resistance minimizes voltage drop and improves steering response. The 175 °C junction-temperature rating supports the harsh under-hood thermal environment, and AEC-Q101 qualification is mandatory for safety-critical steering applications. The PG-TDSON-8-43 package's small footprint and bottom-drain cooling enable integration into space-constrained ECU housings.
Được đề xuất
LED Headlight Driver Output Stage
High-power automotive LED headlights require PWM dimming at 100-400 Hz with peak currents of 10-30 A per channel. The IAUCN04S7L006ATMA1, with 0.6 mΩ R_DS(on) and 175 A rating, easily handles the continuous and pulsed current demands while maintaining low thermal dissipation. The PG-TDSON-8-43 exposed pad integrates directly with the LED-driver PCB for passive cooling. AEC-Q101 qualification ensures the part withstands the temperature and vibration stress of headlamp-module mounting.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUCN04S7L006ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUCN04S7N006ATMA1 | IAUCN04S7N009ATMA1 | IAUCN04S6N009TATMA1 | IAUC100N04S6L020ATMA1 | IAUZN04S7L030ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-43 | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) |
| V_DS Max | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| R_DS(on) Max at 10 V | 0.6 mΩ | 0.6 mΩ | 0.9 mΩ (+50%) | 0.9 mΩ (+50%) | 2.0 mΩ (+233%) | 3.0 mΩ (+400%) |
| Technology Generation | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-6 (previous gen) | OptiMOS-6 | OptiMOS-7 |
| Automotive Qualified | Yes (AEC-Q101) | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Lowest R_DS(on) in the 40 V PG-TDSON-8 family (vsIAUCN04S7N009ATMA1)
- Latest OptiMOS-7 generation (vsIAUCN04S6N009TATMA1)
- Higher current capability within same footprint (vsIAUC100N04S6L020ATMA1)
Ghi chú thiết kế
The PG-TDSON-8-43 package has a drain-exposed bottom pad that must be soldered to a continuous copper pour of at least 25 mm × 25 mm on top and bottom layers for rated thermal performance. With 4 oz copper and 100 A continuous load, the junction-to-ambient thermal resistance is approximately 35 °C/W, supporting sustained operation without a discrete heatsink. For pulsed loads above 200 A, use thermal vias to the opposite copper layer.
Place the gate-drive resistor within 5 mm of pin 4 to minimize parasitic inductance, which can cause gate-oscillation in ultra-low-R_DS(on) parts. Tie the source-Kelvin pin 2 directly to the source pad under the package; do not share this trace with the main source current path. Use a 10 kΩ pull-down on the gate to keep the MOSFET off during MCU reset or power-up glitches.
Do not exceed V_GS = ±20 V (absolute max). If the gate driver can produce overshoot above 18 V during switching transients, add a 15 V Zener clamp between gate and source. Also note that the published 0.6 mΩ R_DS(on) is at V_GS = 10 V; at V_GS = 4.5 V (logic-level drive), R_DS(on) can rise to 1.2-1.5 mΩ, increasing conduction loss by 2-2.5×.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. AEC-Q101 (not AEC-Q100) qualified for automotive use. Lead-free and halogen-free per Infineon material declaration.
