IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon
Référence : IAUCN04S7L006ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.06 | $2,06 |
| 10 | $1.92 | $19,20 |
| 100 | $1.71 | $171,00 |
| 500 | $1.54 | $770,00 |
| 1 000 | $1.38 | $1 380,00 |
IAUCN04S7L006ATMA1 Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power electronics to convert and regulate electrical energy. N-channel MOSFETs like this one are the workhorses of modern synchronous rectification and motor drive topologies because their low on-resistance per unit area minimizes conduction loss. Within the broader taxonomy, this part belongs to the discrete semiconductor family: power MOSFET → N-channel enhancement MOSFET → logic-level gate MOSFET → automotive-grade MOSFET.
Key features include an ultra-low typical R_DS(on) of 0.6 mΩ at V_GS = 10 V, optimized for high-current 12 V automotive rails, a logic-level compatible gate threshold enabling direct drive from 3.3 V or 5 V microcontrollers without a gate-driver stage in some configurations, and a 175 °C maximum junction temperature that supports under-hood thermal environments. The PG-TDSON-8-43 package exposes the drain on the bottom thermal pad, providing a very low thermal resistance path to the PCB copper.
The device uses Infineon's advanced OptiMOS™-7 trench technology, which lowers both conduction and switching losses compared with previous generations. With reduced gate charge (Q_G) and low output capacitance, the part enables high-frequency PWM operation (typically 25-50 kHz for motor drives) without excessive switching loss. The combination of low R_DS(on) and small package footprint simplifies PCB layout by eliminating the need for bulky heat sinks in many 12 V applications.
Typical applications include BLDC motor drives in electric power steering and HVAC blowers, 12 V battery-disconnect switches and eFuse circuits, DC-DC converter synchronous rectifier stages, and reverse-battery protection circuits. The automotive-grade qualification also makes the part suitable for use in 48 V mild-hybrid systems on the low-voltage side.
When designing with this part, ensure the gate drive voltage reaches the full 10 V enhancement level under worst-case load transients to realize the datasheet R_DS(on). Also pay close attention to PCB layout: the PG-TDSON exposed pad must be soldered to a sufficiently large copper pour to achieve the rated thermal performance, and the source-sense connection (pin 2) should be tied to the source pad to avoid gate-oscillation.
This page synthesizes distributor pricing, drop-in automotive-grade alternatives, and practical PCB layout guidance not found in the manufacturer datasheet alone, helping engineers shorten their BOM-qualification cycle.
Alternatives de remplacement direct pour IAUCN04S7L006ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IAUCN04S7L006ATMA1 (même facteur de forme et même empreinte) — différant par Package, Technology, Operating Temperature Range, Series, Qualification.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IAUCN04S7N006ATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.95 / unité
Voir la fiche technique →IAUCN04S7N009ATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$1.55 / unité
Voir la fiche technique →IAUCN04S6N009TATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$1.71 / unité
Voir la fiche technique →IAUC100N04S6L020ATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.86 / unité
Voir la fiche technique →IAUZN04S7L030ATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.36 / unité
Voir la fiche technique →IAUCN04S7L006ATMA1 Valeurs maximales et caractéristiques électriques
| FET Type | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D) | 175 A |
| R_DS(on) Max | 0.6 mΩ at V_GS = 10 V |
| Plage de température de fonctionnement | -55 °C to +175 °C |
| Boîtier | PG-TDSON-8-43 |
| Type de montage | Surface Mount |
| Technology | OptiMOS-7 trench |
| Automotive Qualified | Yes (AEC-Q101) |
| Statut RoHS | Compliant |
| Nombre de broches | 8 |
| Packaging | Tape and Reel (ATMA1) |
| Polarity | Single N-Channel |
Configuration des broches de IAUCN04S7L006ATMA1
| Broche 1 | Source — Source connection (pin 1 of source bond group) |
| Broche 2 | Source (Kelvin) — Kelvin sense source for gate-drive return |
| Broche 3 | Source — Source connection |
| Broche 4 | Gate — Gate drive input |
| Broche 5 | Drain — Drain connection (top-side) |
| Broche 6 | Source — Source connection |
| Broche 7 | Source — Source connection |
| Broche 8 | Drain — Drain connection (top-side) |
Zone de fonctionnement sûr
Applications typiques
IAUCN04S7L006ATMA1 convient pour 6 applications: BLDC Motor Drive (Automotive 12 V), Battery-Disconnect Switch / eFuse, Synchronous Rectifier in DC-DC Converters, Reverse-Battery Protection Circuit, Electric Power Steering (EPS) High-Current Path, LED Headlight Driver Output Stage.
BLDC Motor Drive (Automotive 12 V)
The IAUCN04S7L006ATMA1 is ideal for three-phase BLDC motor inverter stages in 12 V automotive subsystems such as HVAC blowers, water pumps, and engine cooling fans. Its 0.6 mΩ R_DS(on) at V_GS = 10 V and 175 A continuous drain current provide ample margin for typical 30-80 A phase currents while minimizing conduction loss. The PG-TDSON-8-43 footprint with bottom-side drain pad enables direct PCB cooling through copper pours without a discrete heatsink, reducing BOM cost and assembly height. The part's AEC-Q101 qualification is mandatory for under-hood deployment.
Recommandé
Battery-Disconnect Switch / eFuse
Used as the main high-side switch in 12 V automotive battery-disconnect and eFuse circuits, the IAUCN04S7L006ATMA1 handles continuous currents up to 175 A and provides ultra-low 0.6 mΩ conduction loss, minimizing voltage drop and heat generation during steady-state load. Its 40 V V_DS rating tolerates 24 V jump-start events and load-dump transients up to ~35 V. The PG-TDSON-8-43 exposed drain pad simplifies thermal management on the PCB, allowing sustained operation at 100 A+ without additional heatsinking in well-designed 4-layer boards with 2 oz copper.
Recommandé
Synchronous Rectifier in DC-DC Converters
The IAUCN04S7L006ATMA1 serves as the low-side synchronous rectifier MOSFET in 12 V-input buck converters up to 50 A continuous output. With R_DS(on) of only 0.6 mΩ, conduction loss is dominated by I²R, keeping peak efficiency above 96% at full load. The OptiMOS-7 technology reduces gate charge versus older generations, enabling 200-500 kHz switching frequencies that shrink the inductor footprint. Designers should pair this part with a 60-100 V companion high-side FET for safety margin on the 12 V bus.
Recommandé
Reverse-Battery Protection Circuit
The IAUCN04S7L006ATMA1 is well-suited to reverse-battery protection in automotive ECUs, where it acts as a high-side disconnect switch that turns off under fault conditions to protect downstream electronics. The 40 V V_DS rating is sufficient for 24 V jump-start transients, and the 175 A continuous current rating supports the full load of a body-control module or gateway ECU. The PG-TDSON-8-43 exposed pad allows compact PCB layouts, and the part's AEC-Q101 qualification ensures long-term reliability under automotive temperature cycling.
Recommandé
Electric Power Steering (EPS) High-Current Path
In electric power steering systems, the IAUCN04S7L006ATMA1 can be used in the power-supply path that feeds the EPS motor controller, where its 0.6 mΩ on-resistance minimizes voltage drop and improves steering response. The 175 °C junction-temperature rating supports the harsh under-hood thermal environment, and AEC-Q101 qualification is mandatory for safety-critical steering applications. The PG-TDSON-8-43 package's small footprint and bottom-drain cooling enable integration into space-constrained ECU housings.
Recommandé
LED Headlight Driver Output Stage
High-power automotive LED headlights require PWM dimming at 100-400 Hz with peak currents of 10-30 A per channel. The IAUCN04S7L006ATMA1, with 0.6 mΩ R_DS(on) and 175 A rating, easily handles the continuous and pulsed current demands while maintaining low thermal dissipation. The PG-TDSON-8-43 exposed pad integrates directly with the LED-driver PCB for passive cooling. AEC-Q101 qualification ensures the part withstands the temperature and vibration stress of headlamp-module mounting.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IAUCN04S7L006ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IAUCN04S7N006ATMA1 | IAUCN04S7N009ATMA1 | IAUCN04S6N009TATMA1 | IAUC100N04S6L020ATMA1 | IAUZN04S7L030ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-43 | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) |
| V_DS Max | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| R_DS(on) Max at 10 V | 0.6 mΩ | 0.6 mΩ | 0.9 mΩ (+50%) | 0.9 mΩ (+50%) | 2.0 mΩ (+233%) | 3.0 mΩ (+400%) |
| Technology Generation | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-6 (previous gen) | OptiMOS-6 | OptiMOS-7 |
| Automotive Qualified | Yes (AEC-Q101) | Yes | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- Lowest R_DS(on) in the 40 V PG-TDSON-8 family (vs IAUCN04S7N009ATMA1)
- Latest OptiMOS-7 generation (vs IAUCN04S6N009TATMA1)
- Higher current capability within same footprint (vs IAUC100N04S6L020ATMA1)
Notes de conception
The PG-TDSON-8-43 package has a drain-exposed bottom pad that must be soldered to a continuous copper pour of at least 25 mm × 25 mm on top and bottom layers for rated thermal performance. With 4 oz copper and 100 A continuous load, the junction-to-ambient thermal resistance is approximately 35 °C/W, supporting sustained operation without a discrete heatsink. For pulsed loads above 200 A, use thermal vias to the opposite copper layer.
Place the gate-drive resistor within 5 mm of pin 4 to minimize parasitic inductance, which can cause gate-oscillation in ultra-low-R_DS(on) parts. Tie the source-Kelvin pin 2 directly to the source pad under the package; do not share this trace with the main source current path. Use a 10 kΩ pull-down on the gate to keep the MOSFET off during MCU reset or power-up glitches.
Do not exceed V_GS = ±20 V (absolute max). If the gate driver can produce overshoot above 18 V during switching transients, add a 15 V Zener clamp between gate and source. Also note that the published 0.6 mΩ R_DS(on) is at V_GS = 10 V; at V_GS = 4.5 V (logic-level drive), R_DS(on) can rise to 1.2-1.5 mΩ, increasing conduction loss by 2-2.5×.
Informations de conformité
RoHS and REACH compliant per Infineon product page. AEC-Q101 (not AEC-Q100) qualified for automotive use. Lead-free and halogen-free per Infineon material declaration.
