IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon
MPN: IAUC80N04S6N036ATMA1 ✓ Hoạt độngIAUC80N04S6N036ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses an insulated gate to modulate conduction between source and drain. The OptiMOS-6 40 V family belongs to the broader category of power MOSFETs -> silicon power transistors -> discrete semiconductors. Low-voltage N-channel MOSFETs like this part dominate synchronous buck converters, half-bridge motor drives, and OR-ing switches because of their low R_DS(on) and fast switching speed.
Key features of the IAUC80N04S6N036ATMA1 include 3.6 mOhm maximum on-resistance at V_GS = 10 V, 80 A continuous drain current at T_C, and 50 W power dissipation at T_C. The PG-TDSON-8 package combines a small 5 mm x 6 mm footprint with a top-side exposed pad that lowers thermal resistance to the PCB, enabling high current density designs without external heatsinking. The device is AEC-Q101 qualified, making it suitable for automotive applications subject to stringent reliability and temperature-cycling requirements.
OptiMOS-6 technology reduces both switching losses and gate charge compared to previous OptiMOS generations, supporting higher switching frequencies in DC-DC converters. The 40 V drain-source rating provides ample margin above the typical 12 V automotive supply rail, tolerating load-dump transients up to 35 V commonly seen on automotive buses.
Typical applications include 12 V automotive DC-DC converters, electric power steering (EPS), water/oil pumps, cooling fans, LED headlight drivers, and battery management systems. The combination of low R_DS(on), small package, and AEC-Q101 qualification makes this part ideal for high-reliability, space-constrained automotive loads.
When designing with this device, pay close attention to PCB layout to minimize source-inductance loop area, since switching transients can otherwise generate severe V_GS ringing. Use sufficient copper pour and thermal vias beneath the exposed pad to keep junction temperature within the rated -55 C to +175 C range under worst-case SOA conditions.
This page synthesizes distributor pricing, parametric comparison with drop-in alternatives in the same PG-TDSON-8 package, and practical PCB/thermal design guidance - information not consolidated on the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IAUC80N04S6N036ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUC80N04S6N036ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Automotive Qualification, MSL Level.
IAUC60N04S6N044ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC100N04S6L020ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S6N009TATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC64N08S5L075ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC080N04LSGATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IAUC80N04S6N036ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS-6 40 V |
| Polarity | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D) at T_C | 80 A |
| Power Dissipation (P_D) at T_C | 50 W |
| On-Resistance R_DS(on) max at V_GS=10V | 3.6 mOhm |
| Hộp | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | -55 C to +175 C |
| AEC-Q101 Qualification | Qualified (Automotive) |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Terminal Finish | Tin (Sn) (e3 per JESD-609) |
| Peak Reflow Temperature | 260 C (per JEDEC J-STD-020) |
| Compliance - RoHS | Compliant |
| Compliance - REACH | Compliant |
Cấu hình chân IAUC80N04S6N036ATMA1
| Chân 1 | Source — Source terminal (low-side connection) |
| Chân 2 | Source — Source terminal (low-side connection) |
| Chân 3 | Source — Source terminal (low-side connection) |
| Chân 4 | Gate — Gate drive input (V_GS threshold ~1.7 V) |
| Chân 5 | Drain — Drain terminal (high-side connection) |
| Chân 6 | Drain — Drain terminal (high-side connection) |
| Chân 7 | Drain — Drain terminal (high-side connection) |
| Chân 8 | Drain — Drain terminal (high-side connection) |
Khu vực hoạt động an toàn (DC, T_C = 25 C)
Ứng dụng tiêu biểu
IAUC80N04S6N036ATMA1 phù hợp cho 7 Áp dụngs: 12 V Automotive DC-DC Converter, Electric Power Steering (EPS) Motor Drive, Automotive Water/Oil Pump Driver, Battery Management System (BMS) Protection Switch, LED Headlight Driver / Matrix Lighting, Industrial 24 V Bus Hot-Swap / OR-ing, Cooling Fan Motor Drive (HVAC).
12 V Automotive DC-DC Converter
The IAUC80N04S6N036ATMA1 serves as the synchronous-rectifier low-side FET in 12 V-to-1.x V buck converters powering infotainment, ADAS ECUs, and cluster processors. Its 3.6 mOhm R_DS(on) at V_GS = 10 V keeps synchronous conduction losses below 0.3 W at 10 A output, while the 40 V V_DS rating tolerates automotive load-dump transients up to 35 V. The 5 mm x 6 mm PG-TDSON-8 footprint with top-side exposed pad fits converter layouts where the high-side FET and inductor occupy adjacent real estate. Compared to a Schottky-diode-rectified solution, this MOSFET typically improves light-load and full-load efficiency by 4-8%, reducing thermal stress on the overall power stage.
Được đề xuất
Electric Power Steering (EPS) Motor Drive
The IAUC80N04S6N036ATMA1 is well suited for 12 V EPS half-bridge output stages that switch 60-100 A peak currents during steering-assist transients. Its 80 A continuous drain current and 50 W power dissipation cover peak-torque phase currents while AEC-Q101 qualification satisfies automotive functional-safety requirements. The 3.6 mOhm R_DS(on) keeps I-squared-R conduction loss at approximately 7 W per switch at 45 A peak - manageable with the PG-TDSON-8 thermal pad soldered to 1 oz copper with thermal vias. The compact 5x6 mm footprint supports integration inside the steering-column housing where PCB area is at a premium.
Được đề xuất
Automotive Water/Oil Pump Driver
For 12 V brushed-PWM pump drives in thermal-management loops, the IAUC80N04S6N036ATMA1 handles 30-60 A PWM phase currents at 20 kHz switching frequency typical of automotive pump controllers. The OptiMOS-6 technology's low gate charge reduces driver losses in the high-side bootstrap path, while the 40 V V_DS margin tolerates inductive flyback transients from the motor winding. The PG-TDSON-8 package's 31 C/W junction-to-case thermal resistance allows sustained pump operation at 25 A without exceeding 125 C junction with proper PCB copper. AEC-Q101 grade supports under-hood operating temperatures from -40 C to +125 C.
Được đề xuất
Battery Management System (BMS) Protection Switch
In 12 V lead-acid or Li-ion BMS packs, the IAUC80N04S6N036ATMA1 functions as the high-side or low-side disconnect switch carrying 80 A continuous charge/discharge currents. Its 3.6 mOhm R_DS(on) keeps full-load conduction loss at approximately 19 W at 80 A - requiring PCB copper pour and thermal vias to stay within thermal limits. The 40 V V_DS rating covers double-battery jump-start transients in commercial-vehicle applications. AEC-Q101 qualification and -55 C to +175 C junction temperature range suit underhood and chassis-mounted BMS modules.
Được đề xuất
LED Headlight Driver / Matrix Lighting
In adaptive LED headlight matrix drivers, the IAUC80N04S6N036ATMA1 serves as the high-current pixel-switch FET controlling individual LED strings up to 80 A peak during PWM dimming cycles. The 3.6 mOhm R_DS(on) maintains PWM rise/fall times below 1 microsecond, supporting flicker-free dimming at 200 Hz-2 kHz. The 40 V V_DS rating provides margin above the 12 V automotive bus plus inductive ringing from the LED harness. PG-TDSON-8's small footprint supports dense multi-channel matrix layouts, and AEC-Q101 qualification ensures photometric stability across vehicle lifetime.
Được đề xuất
Industrial 24 V Bus Hot-Swap / OR-ing
In industrial 24 V bus systems, the IAUC80N04S6N036ATMA1 acts as the OR-ing FET between redundant 24 V power feeds, blocking reverse current flow when one source drops. The 40 V V_DS rating provides ~16 V of margin above the 24 V nominal bus - sufficient for typical industrial transients. The 3.6 mOhm R_DS(on) keeps OR-ing conduction loss below 0.3 W at 10 A load, and the AEC-Q101 qualification extends reliability margins to industrial-grade temperature ranges. Although AEC-qualified, the part is widely used outside automotive due to its robust SOA performance.
Được đề xuất
Cooling Fan Motor Drive (HVAC)
The IAUC80N04S6N036ATMA1 fits as the low-side FET in brushed or BLDC HVAC cooling-fan motor drives up to 60 A peak. Its OptiMOS-6 gate-charge profile supports 25 kHz PWM frequencies, enabling quieter acoustic performance than older OptiMOS generations at the same switching loss. The 40 V V_DS rating covers 12 V supply plus inductive spike transients, and the small PG-TDSON-8 footprint suits the fan's onboard motor-control PCB. AEC-Q101 grade supports integration into HVAC modules located in the engine compartment where ambient temperatures reach 105 C.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUC80N04S6N036ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUC60N04S6N044ATMA1 | IAUC100N04S6L020ATMA1 | IAUCN04S6N009TATMA1 | IAUC64N08S5L075ATMA1 | BSC080N04LSGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8 (SuperSO8 5x6 mm) - same | PG-TDSON-8 (SuperSO8 5x6 mm) - same | PG-TDSON-8 (SuperSO8 5x6 mm) - same | PG-TDSON-8 (SuperSO8 5x6 mm) - same | PG-TDSON-8 (SuperSO8 5x6 mm) - same |
| Drain-Source Voltage (V_DS) | 40 V | 40 V | 40 V | 40 V | 80 V | 40 V |
| R_DS(on) max at V_GS=10V | 3.6 mOhm | 4.4 mOhm (+22%) | 2.0 mOhm (-44%) | 0.9 mOhm (-75%) | 7.5 mOhm (+108%) | 8.0 mOhm (+122%) |
| Technology Generation | OptiMOS-6 | OptiMOS-6 | OptiMOS-6 | OptiMOS-6 | OptiMOS-5 | OptiMOS (legacy) |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Lowest R_DS(on) in 80 A OptiMOS-6 40 V class (vsIAUC60N04S6N044ATMA1)
- Higher current rating than same-package 40 V alternatives (vsIAUC64N08S5L075ATMA1)
- OptiMOS-6 generation gate-charge improvement (vsBSC080N04LSGATMA1)
Ghi chú thiết kế
Estimated: at I_D = 80 A and R_DS(on) = 3.6 mOhm (worst-case, T_J = 150 C), conduction loss is approximately P = I^2 x R = 6400 x 0.0036 = 23 W. The PG-TDSON-8 package has a junction-to-ambient thermal resistance of approximately 50 C/W on a 1 oz copper 1 sq-inch pad with thermal vias. Junction temperature rise = 23 W x 50 C/W = 1150 C above ambient - far exceeding 175 C limit, so continuous 80 A operation requires substantial copper pours (>=2 sq inch), multiple thermal vias, or forced airflow. Practical sustained current at 25 C ambient is typically 40-50 A.
Place the PG-TDSON-8 exposed pad on a continuous copper pour with at least 4 thermal vias (0.3 mm diameter) directly under the pad to minimize junction-to-ambient thermal resistance. Use wide, short gate-drive traces (<= 5 mm) and place the gate-driver IC within 10 mm of the gate pin to limit gate-loop inductance. A 10 Ohm gate-source resistor close to the gate pin prevents parasitic turn-on from drain-to-gate Miller coupling during fast V_DS transitions.
Do not exceed V_GS = +/-20 V (per OptiMOS-6 datasheet rating); gate-drive voltages above 12 V are acceptable but require careful dv/dt control to avoid ringing. The PG-TDSON-8 source pins (1-3) and drain pins (5-8) must be solidly bonded to copper planes for both current carrying and thermal dissipation - cold-solder joints on the exposed pad dramatically reduce thermal performance. During PCB assembly, follow JEDEC J-STD-020 MSL-1 handling - this part is moisture-insensitive but peak reflow must stay <= 260 C for <= 30 s.
Minimize the high-current source-inductance loop area between the MOSFET source pins, the gate-driver ground return, and the decoupling capacitors. Use a Kelvin connection for the gate-drive return path: route the gate-driver ground separately from the source-sensing trace so that high di/dt in the source loop does not inject voltage into the gate. The exposed pad must be soldered to a continuous ground/power plane - do not split the pad with thermal relief spokes, as this increases inductance and reduces thermal conductivity.
Thông tin tuân thủ
AEC-Q101 (automotive) qualified per Arrow and TME distributor listings identifying this part as 'Automotive AEC-Q101'. RoHS compliant and lead-free per JEDEC JESD-609 e3 (Tin terminal finish). Halogen-free status not explicitly confirmed in the verified web data.
