ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon
MPN: ISK057N04LM6ATLA1 ✓ Hoạt độngISK057N04LM6ATLA1 Tóm tắt
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the fundamental switching element of modern power electronics. Within the device hierarchy, this part sits as: N-channel MOSFET → power MOSFET → discrete semiconductor → power management component. OptiMOS 6 represents Infineon's sixth-generation 40 V trench MOSFET platform, optimized for low RDS(on), low gate charge (Qg), and low Figure-of-Merit (FOM = RDS(on) × Qg) to minimize conduction and switching losses in high-frequency SMPS topologies.
Key specifications include a 40 V drain-to-source breakdown (VDS max), 64 A continuous drain current at case temperature (ID @ Tc), and a typical RDS(on) of 5.7 mΩ at VGS = 10 V. The PG-VSON-6-1 (PQFN 2x2) package measures only 2 mm × 2 mm with an exposed drain pad that doubles as a thermal dissipation path. The device is rated for 2.1 W power dissipation at TA = 25 °C and 39.1 W at TC = 25 °C, with a junction-to-ambient thermal resistance (RθJA) of approximately 60 °C/W on a standard JEDEC 2s2p test board.
The trench-gate architecture reduces gate charge to roughly 8-12 nC typical, enabling switching frequencies above 1 MHz in buck or half-bridge converters. Logic-level compatibility (full enhancement at VGS ~4.5 V) allows direct drive from 5 V PWM controllers without a charge-pump or gate-drive boost stage. The device supports both hard-switching and soft-switching topologies with robust avalanche capability.
Typical applications include DC-DC point-of-load converters (POL), wireless charging TX coils, USB-PD power-path OR-ing, motor drive H-bridges, and battery protection in 1S-3S Li-ion packs. The compact 2x2 mm footprint is ideal for smartphone PMIC sub-circuits where board area is at a premium.
Design consideration: maximize the copper area beneath the exposed pad and use multiple thermal vias to the inner ground plane. Without adequate PCB heatsinking, the 60 °C/W RθJA limits continuous current well below the 64 A rating. Avoid exceeding the SOA envelope during startup transients in hard-switched converters.
This page consolidates distributor pricing, parametric comparison tables, drop-in alternatives, and practical PCB layout notes that supplement the manufacturer datasheet with engineering context.
Bộ thay thế dễ dàng lắp đặt cho ISK057N04LM6ATLA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với ISK057N04LM6ATLA1 (cùng hình factor và footprint) — khác nhau ở Technology, Package, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
IQE020N04LM6CGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC028N06NSTATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPB021N10NM5LF2ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPI031N08N5ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPB031N08N5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC098N10NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUZ30N08S5N186ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISK057N04LM6ATLA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 6 |
| Kiểu transitor | N-Channel MOSFET |
| Technology | Trench (OptiMOS 6) |
| Drain-to-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tc | 64 A |
| RDS(on) typical at VGS=10V | 5.7 mΩ |
| Power Dissipation (PD) at Ta=25C | 2.1 W |
| Power Dissipation (PD) at Tc=25C | 39.1 W |
| Khoảng nhiệt độ hoạt động | -55 °C to +150 °C |
| Hộp / Vỏ | PG-VSON-6-1 (PQFN 2x2) |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 |
| Packaging | Tape & Reel (TR) |
| DigiKey Part Number | 448-ISK057N04LM6ATLA1TR-ND |
Cấu hình chân ISK057N04LM6ATLA1
| Chân 1 | G — Gate |
| Chân 2 | S — Source |
| Chân 3 | S — Source |
| Chân 4 | S — Source |
| Chân 5 | S — Source |
| Chân 6 | D — Drain (also exposed pad on bottom) |
Khu vực hoạt động an toàn (DC, TC=25°C)
Ứng dụng tiêu biểu
ISK057N04LM6ATLA1 phù hợp cho 7 Áp dụngs: Synchronous Buck DC-DC Converter, Wireless Charging TX Coil Switching, USB Power Delivery (USB-PD) Power Path OR-ing, Battery Protection (1S-3S Li-ion), BLDC Motor Drive H-Bridge (Low-Side), Hot-Swap / In-Rush Current Limiter, Load Switch / Power Mux.
Synchronous Buck DC-DC Converter
The ISK057N04LM6ATLA1's 5.7 mΩ typical RDS(on) at VGS=10 V and 64 A continuous drain current make it ideal for the synchronous low-side FET in 12 V-to-1.x V buck converters. In a typical 4-switch buck topology, it dissipates P=I²×R = 4²×0.0057 ≈ 91 mW at 4 A load, keeping efficiency above 95 % at 500 kHz switching. The PG-VSON-6-1 2x2 mm footprint saves critical PCB area under PMIC sub-circuits, and the logic-level gate drive (full enhancement at VGS ~4.5 V) eliminates the need for a bootstrap gate driver, reducing BOM cost by 15-20 % versus standard 10 V-drive MOSFETs. Pair with a high-side BSZ0901NS (40 V, 9 mΩ) for a matched synchronous pair.
Được đề xuất
Wireless Charging TX Coil Switching
The ISK057N04LM6ATLA1's OptiMOS 6 trench technology delivers sub-10 nC total gate charge, enabling resonant wireless charging TX coil switching above 1 MHz with minimal driver losses. In a Qi-compliant 15 W TX coil driver, the MOSFET operates in zero-voltage switching (ZVS) mode where its low Qoss and Coss reduce circulating current losses. The 64 A peak current capability handles the LC tank transient peaks (often 2-3× steady-state), while the 2x2 mm PG-VSON-6-1 footprint fits beneath the TX coil in smartphone form-factor chargers. Compared to legacy planar MOSFETs, the OptiMOS 6 platform reduces TX coil driver temperature by 10-15 °C at full 15 W output, improving user safety margins and enabling sealed enclosures without thermal vents.
Được đề xuất
USB Power Delivery (USB-PD) Power Path OR-ing
In USB-PD applications, the ISK057N04LM6ATLA1 functions as the high-current OR-ing FET between USB-C VBUS and the system battery rail. Its 5.7 mΩ RDS(on) at 64 A means only 365 mV drop at 5 A load - well within USB-PD 3.1 EPR's 28 V/36 V/48 V tolerance window when operating on a 20 V rail. The 40 V VDS rating provides 2:1 margin above standard 20 V USB-PD voltages, ensuring robust operation during cable hot-plug transients. Logic-level gate drive allows direct N-channel back-to-back configuration from a 5 V GPIO, simplifying the OR-ing controller circuit. This topology is standard in modern laptops and docking stations where simultaneous USB-C charging from multiple sources requires seamless source-switching without diode losses.
Được đề xuất
Battery Protection (1S-3S Li-ion)
The ISK057N04LM6ATLA1's compact PG-VSON-6-1 footprint and 64 A pulse current rating suit 1S-3S Li-ion battery protection MOSFETs in power tools, e-bikes, and portable medical devices. In a typical 3S 10 A continuous discharge protection circuit, the MOSFET pair dissipates only P=I²×2R = 100×0.0114 ≈ 1.14 W, eliminating the need for an external heatsink. The OptiMOS 6 platform's low RDS(on) at low VGS (down to 4.5 V) ensures the protection FET remains fully enhanced even at end-of-discharge battery voltages (3.0 V/cell = 9 V pack). Compared to traditional DPAK protection FETs, the 2x2 mm PQFN saves 70 % board area, enabling higher cell-count protection boards in tight enclosures.
Được đề xuất
BLDC Motor Drive H-Bridge (Low-Side)
In a 3-phase BLDC motor drive H-bridge, the ISK057N04LM6ATLA1 serves as the low-side switch in each half-bridge, with a complementary high-side P-channel or gate-driver-driven N-channel. At 12 V motor supply and 20 A phase current, the FET dissipates P=I²×R = 20²×0.0057 ≈ 2.28 W per low-side FET - manageable with a small copper pour. The 40 V VDS provides adequate margin for the back-EMF spikes of small BLDCs (typically 1.5-2× supply). OptiMOS 6's low Qg (~10 nC) supports PWM frequencies above 50 kHz for silent motor operation, while the PG-VSON-6-1 footprint allows 6 FETs to fit on a 25 mm × 25 mm PCB, ideal for drone ESCs and compact robotics actuators.
Được đề xuất
Hot-Swap / In-Rush Current Limiter
The ISK057N04LM6ATLA1 is well-suited as the inrush-limiting FET in 12 V hot-swap controllers for plug-in cards and server backplanes. Its 5.7 mΩ RDS(on) keeps steady-state voltage drop below 60 mV at 10 A, while the 64 A pulsed rating handles the initial capacitor-charging surge. The 40 V VDS rating provides margin against transient ringing on long cables (typically 30-35 V peaks for 12 V systems). When paired with a hot-swap controller like the LTC4217 or TPS2590, the FET's logic-level gate drive simplifies the analog control loop. The PG-VSON-6-1 footprint allows the hot-swap circuit to fit on a single SFP-module edge card, eliminating the need for larger DPAK or D2PAK FETs that compromise board density.
Được đề xuất
Load Switch / Power Mux
The ISK057N04LM6ATLA1 serves as a high-efficiency load switch in multi-rail power-mux circuits, replacing traditional P-channel MOSFETs with lower losses. Driven by a charge-pump or gate-driver, it provides reverse-current blocking and inrush control for downstream DC-DC converters or peripheral loads. At 5 A continuous, conduction loss is only 143 mW, and the 2x2 mm PQFN footprint fits beneath any downstream regulator. This topology is common in tablet and laptop power-path ICs where system architects must select between battery, USB-C, and barrel-jack inputs without diode drops. The OptiMOS 6 platform's soft-body-diode recovery (Qrr) reduces switching transients compared to older planar MOSFETs.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho ISK057N04LM6ATLA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IQE020N04LM6CGATMA1 | BSC028N06NSTATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-VSON-6-1 (PQFN 2x2) | PG-VSON-6-1 (PQFN 2x2) | PG-TDSON-8 | PG-TO263-7 |
| Drain-to-Source Voltage (VDS) | 40 V | 40 V | 60 V | 100 V |
| Technology Family | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 |
| Operating Temperature Range | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +175 °C |
| Logic-Level Gate Drive | Yes (4.5 V) | Yes | Yes | Yes (OptiMOS 5) |
Bảo phân biệt quan trọng
- Logic-level gate drive eliminates bootstrap requirement (vsIRF520NPBF)
- Sub-6 mΩ RDS(on) in 2x2 mm footprint (vsIPI031N08N5ATMA1 (I2PAK))
- OptiMOS 6 platform provides 20-30 % lower FOM vs OptiMOS 5 (vsBSC028N06NSTATMA1 (OptiMOS 5))
- 40 V VDS with logic-level gate in PG-VSON-6-1 (vsBSP772TXUMA1 (smart high-side switch))
Ghi chú thiết kế
The PG-VSON-6-1 package has a junction-to-ambient thermal resistance of approximately 60 °C/W on a JEDEC 2s2p test board, dropping to 40 °C/W with 1 oz copper flood under the exposed pad. At 1 A continuous, conduction loss is only 5.7 mW; at 20 A, dissipation rises to 2.28 W and the junction will rise 137 °C above ambient on a standard PCB. Always maximize copper area beneath the exposed pad and use at least 9 thermal vias (0.3 mm drill, 1 oz plating) to an inner ground plane for sustained high-current operation above 15 A.
The exposed drain pad must be soldered to a continuous copper plane that extends to via arrays for heat spreading. Recommended land pattern is the IPC-7351 nominal-density footprint with 0.5 mm pad pitch. Place gate-drive traces on an inner layer with the gate resistor (typically 10-47 Ω) within 5 mm of the gate pin to prevent parasitic oscillation. Keep the high-di/dt source-return loop (FET source → driver ground → driver output) under 5 nH to limit voltage overshoot during switching transitions.
Do not operate the ISK057N04LM6ATLA1 above 32 V VDS in continuous hot-swap applications without proper SOA derating. The PG-VSON-6-1 package's small thermal mass cannot sustain prolonged avalanche events; limit unclamped inductive switching (UIS) to single-pulse events below the rated avalanche energy. Ensure VGS never exceeds ±20 V (absolute max) - use a gate-source Zener (5.1 V) for protection in harsh environments. Finally, verify that the controller's minimum gate-drive voltage is below 4.5 V at full load, otherwise the FET will operate in the linear region and overheat.
In high-frequency buck converter applications (≥500 kHz), the ISK057N04LM6ATLA1's gate charge (Qg ~10 nC) drives the timing budget. Use a gate driver with peak source/sink current of 2-4 A to achieve 10-90 % rise/fall times below 20 ns. Place a 4.7 Ω gate resistor in series to dampen ringing from the gate-source loop inductance; an excessively small resistor (<2 Ω) can cause parasitic turn-on from Miller coupling during the high-side turn-on transition. For optimal EMI performance, add a small ferrite bead on the gate-drive return path.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Halogen-free per industry-standard MOSFET datasheet. Not AEC-Q100 qualified (industrial/consumer grade); for automotive applications, contact Infineon for Q-100 variants.
