K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
MPN: K4A8G165WC-BCWE ✓ Hoạt động| Số lượng | Giá đơn vị | Phụ |
|---|---|---|
| 1 | $47.51 | $47,51 |
| 10 | $45 | $450,00 |
| 100 | $42.5 | $4.250,00 |
| 500 | $40 | $20.000,00 |
| 1.000 | $38 | $38.000,00 |
K4A8G165WC-BCWE Tóm tắt
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than previous generations, reducing power consumption while delivering higher bandwidth. DDR4 is the industry standard for main memory in servers, desktops, laptops, and embedded systems, offering improved reliability and performance over its predecessors.
Key features of the K4A8G165WC-BCWE include auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check) for data integrity, ZQ calibration for improved signal integrity, dynamic on-chip termination (ODT) for better signal quality, and data mask function. These features enhance system reliability and performance, especially in high-speed data transmission environments. The device complies with JEDEC standards for DDR4 memory, ensuring interoperability with a wide range of controllers and systems.
Technically, the K4A8G165WC-BCWE utilizes Samsung's advanced C-die process technology, which contributes to its high speed and low power consumption. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for modern PCB designs. The device supports a burst length of 8 and burst chop of 4, and includes programmable CAS latency and additive latency for flexible timing configurations.
Typical applications include high-performance computing, networking equipment, data centers, and embedded systems requiring large memory capacity and high bandwidth. The 512M x 16 organization is ideal for systems with a 16-bit data bus, such as advanced microprocessors and FPGAs. The low operating voltage and high speed make it suitable for power-sensitive applications like laptops and portable devices.
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. Also, follow the JEDEC DDR4 layout guidelines for signal integrity, especially for high-speed signals. The device requires a stable 1.2V supply and a separate VPP of 2.5V for word line boost, which must be properly regulated.
Bộ thay thế dễ dàng lắp đặt cho K4A8G165WC-BCWE — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với K4A8G165WC-BCWE (cùng hình factor và footprint) — khác nhau ở Interface, Package, Data Rate, Memory Type, Supply Voltage.
Công cụ so sánh nhanh — Chọn các bộ phận thay thế để so sánh song song:
K4A8G165WG-BCWE
✗ Hết hàng
$29.5313 / Đơn vị
Xem tài liệu →K4A8G165WC-BCRC
Liên hệ để biết giá
Xem tài liệu →K4A8G165WB-BCWE
✓ Còn hàng
$6.55 / Đơn vị
Xem tài liệu →MT40A512M16JY-075E
Liên hệ để biết giá
Xem tài liệu →H5AN8G6NDJR
Liên hệ để biết giá
Xem tài liệu →AS4C512M16D4A-62BCN
Liên hệ để biết giá
Xem tài liệu →NT5AD512M16C4-JRI
✓ Còn hàng
$75.58 / Đơn vị
Xem tài liệu →YZ48G16V-F9HPI-M
Liên hệ để biết giá
Xem tài liệu →K4A8G165WC-BCWE Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR4 SDRAM |
| Density | 8 Gb |
| Tổ chức | 512M x 16 |
| Tốc độ dữ liệu | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V |
| VPP Voltage | 2.5 V |
| Khoảng nhiệt độ hoạt động | 0°C to +95°C |
| Hộp | 96-FBGA |
| Kiểu lắp đặt | Surface Mount |
| Burst Length | 8 (BL8) / 4 (BC4) |
| Number of Banks | 16 |
| Row Address Bits | 16 |
| Column Address Bits | 10 |
| Giao diện | Differential (CK, /CK) |
| Trạng thái RoHS | Compliant |
| JEDEC Standard | JEDEC DDR4 |
Cấu hình chân K4A8G165WC-BCWE
| Chân A1 | VDD — Power supply (1.2V) |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | VSS — Ground |
| Chân B1 | DQ1 — Data input/output 1 |
| Chân B2 | VDDQ — Power supply for output buffers |
| Chân B3 | DQ2 — Data input/output 2 |
| Chân C1 | VSSQ — Ground for output buffers |
| Chân C2 | DQ3 — Data input/output 3 |
| Chân C3 | VDD — Power supply (1.2V) |
| Chân D1 | DQ4 — Data input/output 4 |
| Chân D2 | VSS — Ground |
| Chân D3 | DQ5 — Data input/output 5 |
| Chân E1 | VDDQ — Power supply for output buffers |
| Chân E2 | DQ6 — Data input/output 6 |
| Chân E3 | VSSQ — Ground for output buffers |
| Chân F1 | DQ7 — Data input/output 7 |
| Chân F2 | VDD — Power supply (1.2V) |
| Chân F3 | DQ8 — Data input/output 8 |
| Chân G1 | VSS — Ground |
| Chân G2 | DQ9 — Data input/output 9 |
| Chân G3 | VDDQ — Power supply for output buffers |
| Chân H1 | DQ10 — Data input/output 10 |
| Chân H2 | VSSQ — Ground for output buffers |
| Chân H3 | DQ11 — Data input/output 11 |
| Chân J1 | VDD — Power supply (1.2V) |
| Chân J2 | DQ12 — Data input/output 12 |
| Chân J3 | VSS — Ground |
| Chân K1 | DQ13 — Data input/output 13 |
| Chân K2 | VDDQ — Power supply for output buffers |
| Chân K3 | DQ14 — Data input/output 14 |
| Chân L1 | VSSQ — Ground for output buffers |
| Chân L2 | DQ15 — Data input/output 15 |
| Chân L3 | VDD — Power supply (1.2V) |
| Chân M1 | VSS — Ground |
| Chân M2 | CK — Clock input (positive) |
| Chân M3 | VDDQ — Power supply for output buffers |
| Chân N1 | /CK — Clock input (negative) |
| Chân N2 | VSSQ — Ground for output buffers |
| Chân N3 | CKE — Clock enable |
| Chân P1 | VDD — Power supply (1.2V) |
| Chân P2 | VSS — Ground |
| Chân P3 | CS_n — Chip select (active low) |
Ứng dụng tiêu biểu
K4A8G165WC-BCWE phù hợp cho 6 Áp dụngs: High-Performance Computing, Networking Equipment, Embedded Systems, Data Center Servers, Consumer Electronics, Automotive Infotainment.
High-Performance Computing
The K4A8G165WC-BCWE provides 8Gb density and 3200 Mbps speed, making it ideal for servers and workstations that require large memory capacity and high bandwidth. Its low 1.2V operation reduces power consumption in data centers, while the 96-FBGA package enables high-density DIMM designs. The device's CRC and on-die ECC features enhance data integrity in mission-critical computing environments.
Được đề xuất
Networking Equipment
In routers, switches, and network appliances, the K4A8G165WC-BCWE offers the speed and capacity needed for packet buffering and routing tables. Its 3200 Mbps data rate supports high-throughput data processing, while the 1.2V supply helps meet strict power budgets. The device's dynamic ODT and ZQ calibration improve signal integrity on high-speed buses, ensuring reliable operation in noisy environments.
Được đề xuất
Embedded Systems
For embedded applications like industrial controllers and IoT gateways, the K4A8G165WC-BCWE provides a balance of density, speed, and power efficiency. Its 0°C to +95°C temperature range covers most commercial and industrial environments. The 96-FBGA package is suitable for compact PCB designs, and the device's low power consumption extends battery life in portable systems.
Được đề xuất
Data Center Servers
The K4A8G165WC-BCWE is well-suited for data center servers that require high memory capacity and bandwidth for virtualization, databases, and cloud computing. Its 8Gb density allows for large memory modules, and the 3200 Mbps speed meets the demands of modern processors. The low operating voltage reduces total power consumption, contributing to energy-efficient data centers.
Được đề xuất
Consumer Electronics
In high-end consumer devices like gaming consoles and set-top boxes, the K4A8G165WC-BCWE delivers the memory performance needed for smooth graphics and multitasking. Its 3200 Mbps data rate supports high-resolution video and gaming, while the 1.2V supply helps manage heat and power in compact enclosures. The device's small FBGA package enables slim device designs.
Được đề xuất
Automotive Infotainment
The K4A8G165WC-BCWE can be used in automotive infotainment systems that require high memory bandwidth for navigation, multimedia, and driver assistance features. Its 0°C to +95°C temperature range is suitable for cabin environments, though not for under-hood applications. The device's reliability features like CRC and ODT ensure stable operation in the electrically noisy automotive environment.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho K4A8G165WC-BCWE — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | K4A8G165WG-BCWE | MT40A512M16JY-075E | H5AN8G6NDJR |
|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Bảo phân biệt quan trọng
- C-die revision with wide temperature range (vsK4A8G165WG-BCWE)
- Samsung's proven reliability and performance (vsMT40A512M16JY-075E)
- Availability and ecosystem support (vsH5AN8G6NDJR)
Ghi chú thiết kế
Ensure stable 1.2V VDD and 2.5V VPP supplies with adequate decoupling. Place 0.1uF and 1uF ceramic capacitors close to each power pin to minimize noise and voltage droop during high-speed switching. Follow the JEDEC DDR4 power distribution guidelines for optimal performance.
Route high-speed DQ, DQS, and clock signals with controlled impedance (typically 40-50 ohms) and matched trace lengths to ensure signal integrity. Use ground planes and minimize vias on critical signals. Refer to the Samsung layout guidelines in the datasheet for recommended routing and spacing.
The K4A8G165WC-BCWE operates up to +95°C, but ensure adequate airflow or heatsinking in high-power systems. The 96-FBGA package has a thermal resistance that should be considered; use thermal vias under the package to improve heat dissipation. Monitor junction temperature to avoid exceeding the maximum rating.
Thông tin tuân thủ
RoHS compliance is indicated by Samsung's product page. Other compliance details are not explicitly stated in the provided data.
