Memory pricing is moving daily — on-site prices may lag behind the market. Please submit an RFQ for the up-to-the-minute quotation.

Request Latest Price →

Nanya Technology

NT5CB256M16CP-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya

Name: NT5CB256M16CP-EK
Brand: Nanya Technology

MPN: NT5CB256M16CP-EK ✓ Hoạt động

1.35V (1.425V to 1.575V) Vdss 96-ball TFBGA Package DDR3L SDRAM Memory

Yêu cầu báo giá

MOQ: 1 |

Xem tài liệu kỹ thuật (PDF) Xem các bộ thay thế

Số lượng

NT5CB256M16CP-EK Tóm tắt

The Nanya NT5CB256M16CP-EK is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V (DDR3L) with a 96-ball TFBGA package. It supports data rates up to DDR3-2133 (CL14) and is designed for commercial, industrial, and automotive temperature grades. The device features 8 internal memory banks, differential clock inputs (CK, CK#), and programmable CAS Latency (CL), WRITE Latency (CWL), and Posted CAS Additive Latency. With a 16-bit data bus, it is ideal for applications requiring high-density, low-power memory in compact form factors.

DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile, embedded, and industrial systems where power efficiency is critical, and it is backward compatible with DDR3 through its support for both 1.35V and 1.5V operation.

Key features include a 4Gb density, 256M x 16 organization, 96-ball TFBGA package, and support for data rates up to 2133 Mbps. The device operates from a 1.35V supply (1.425V to 1.575V range) and features programmable CAS Latency (CL) of 9, 10, 11, 12, 13, and 14, and WRITE Latency (CWL) of 5, 6, 7, 8, and 9. It also supports on-die termination (ODT), dynamic ODT, and programmable output driver impedance. The industrial and automotive temperature grades ensure reliable operation from -40°C to +95°C (case temperature).

Technically, the NT5CB256M16CP uses a 30nm-class DRAM process, enabling high density with low power. The device includes 8 internal banks (BA0-BA2) for efficient interleaving and reduced row activation overhead. Differential clock inputs (CK, CK#) improve signal integrity, and the programmable additive latency (AL) supports posted CAS operations for improved bus efficiency. The device also features auto refresh and self refresh modes, with a typical refresh period of 7.8us at 85°C and 3.9us at 95°C.

Typical applications include embedded computing, networking equipment, industrial automation, automotive infotainment and ADAS, and high-performance consumer electronics. The 256M x 16 organization is well-suited for systems requiring a 16-bit memory bus, such as SoCs and FPGAs with wide memory interfaces. The low-voltage operation makes it ideal for battery-powered and thermally constrained designs.

When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the PCB layout guidelines for DDR3 routing, including matched trace lengths and impedance control (typically 40-50 ohms). The VREFCA and VREFDQ should be decoupled with 0.1uF capacitors to ground.

Bộ thay thế dễ dàng lắp đặt cho NT5CB256M16CP-EK — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.

Các biến thể trong loạt này

Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với NT5CB256M16CP-EK (cùng hình factor và footprint) — khác nhau ở Package, Supply Voltage, Data Rate, Operating Temperature, CAS Latency (CL).

K4B4G1646E-BYMA

Samsung Electronics

Package: FBGA-96

Supply Voltage: 1.35 V (1.28 V to 1.575 V)

Data Rate: 1866 Mbps/pin