NT5CB256M16CP-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya
部品番号: NT5CB256M16CP-EK ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.1 | $710.00 |
| 500 | $6.4 | $3,200.00 |
| 1,000 | $5.9 | $5,900.00 |
NT5CB256M16CP-EK 概要
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile, embedded, and industrial systems where power efficiency is critical, and it is backward compatible with DDR3 through its support for both 1.35V and 1.5V operation.
Key features include a 4Gb density, 256M x 16 organization, 96-ball TFBGA package, and support for data rates up to 2133 Mbps. The device operates from a 1.35V supply (1.425V to 1.575V range) and features programmable CAS Latency (CL) of 9, 10, 11, 12, 13, and 14, and WRITE Latency (CWL) of 5, 6, 7, 8, and 9. It also supports on-die termination (ODT), dynamic ODT, and programmable output driver impedance. The industrial and automotive temperature grades ensure reliable operation from -40°C to +95°C (case temperature).
Technically, the NT5CB256M16CP uses a 30nm-class DRAM process, enabling high density with low power. The device includes 8 internal banks (BA0-BA2) for efficient interleaving and reduced row activation overhead. Differential clock inputs (CK, CK#) improve signal integrity, and the programmable additive latency (AL) supports posted CAS operations for improved bus efficiency. The device also features auto refresh and self refresh modes, with a typical refresh period of 7.8us at 85°C and 3.9us at 95°C.
Typical applications include embedded computing, networking equipment, industrial automation, automotive infotainment and ADAS, and high-performance consumer electronics. The 256M x 16 organization is well-suited for systems requiring a 16-bit memory bus, such as SoCs and FPGAs with wide memory interfaces. The low-voltage operation makes it ideal for battery-powered and thermally constrained designs.
When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the PCB layout guidelines for DDR3 routing, including matched trace lengths and impedance control (typically 40-50 ohms). The VREFCA and VREFDQ should be decoupled with 0.1uF capacitors to ground.
ドロップイン代替品: NT5CB256M16CP-EK — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: NT5CB256M16CP-EK （同一形状・フットプリント） — 相違点: Package, Supply Voltage, Data Rate, Operating Temperature, CAS Latency (CL).
クイック比較ツール — 並列比較する代替部品を選択:
NT5CB256M16CP-DI
✅ ドロップイン✓ 在庫あり
$6.5 / 個
データシートを見る →NT5CB256M16DP-EK
✅ ドロップイン📋 参考代替品（カタログ未掲載）
NT5CC256M16CP-EK
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$22 / 個
データシートを見る →MT41K256M16TW-107
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$14.1 / 個
データシートを見る →K4B4G1646E-BYMA
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$14.3182 / 個
データシートを見る →NT5CB256M16CP-EK 最大定格＆電気的特性
| メモリタイプ | DDR3L SDRAM |
| Density | 4Gb |
| メモリ構成 | 256M x 16 |
| 電源電圧 | 1.35V (1.425V to 1.575V) |
| データレート | DDR3-2133 (CL14) |
| CAS Latency (CL) | 9, 10, 11, 12, 13, 14 |
| WRITE Latency (CWL) | 5, 6, 7, 8, 9 |
| Posted CAS Additive Latency | Programmable |
| Internal Banks | 8 (BA0-BA2) |
| パッケージ | 96-ball TFBGA |
| 動作温度 | Commercial: 0C to +95C; Industrial: -40C to +95C; Automotive: -40C to +95C |
| RoHS | Compliant |
| REACH | Compliant |
| Lead-Free | Yes |
| 実装タイプ | Surface Mount |
NT5CB256M16CP-EK ピン構成
| ピン A1 | VDD — Power supply (1.35V) |
| ピン A2 | DQ0 — Data input/output 0 |
| ピン A3 | DQ1 — Data input/output 1 |
| ピン A4 | VSS — Ground |
| ピン B1 | DQ2 — Data input/output 2 |
| ピン B2 | DQ3 — Data input/output 3 |
| ピン B3 | VDDQ — DQ power supply |
| ピン C1 | DQ4 — Data input/output 4 |
| ピン C2 | DQ5 — Data input/output 5 |
| ピン C3 | VSSQ — DQ ground |
| ピン D1 | DQ6 — Data input/output 6 |
| ピン D2 | DQ7 — Data input/output 7 |
| ピン D3 | VDD — Power supply |
| ピン E1 | DM0 — Data mask 0 |
| ピン E2 | DQS0 — Data strobe 0 |
| ピン E3 | DQS0# — Data strobe 0 complement |
主な用途
NT5CB256M16CP-EK の用途: 6 件s: Embedded Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Consumer Electronics, Test and Measurement.
Embedded Computing
The NT5CB256M16CP-EK provides high-density, low-power memory for embedded processors and SoCs. Its 256M x 16 organization matches wide memory buses, and the 1.35V operation reduces power in thermally constrained designs. With data rates up to DDR3-2133, it supports high-bandwidth applications like industrial PCs and edge computing. The 96-ball TFBGA package enables compact PCB layouts, and the industrial temperature grade ensures reliability in harsh environments.
おすすめ
Networking Equipment
In networking switches and routers, the NT5CB256M16CP-EK provides fast, reliable memory for packet buffering and routing tables. Its DDR3-2133 data rate and 16-bit bus deliver high throughput, while the low 1.35V supply reduces power in 24/7 operation. The 8 internal banks enable efficient interleaving, minimizing latency. The commercial temperature grade is suitable for standard networking environments, and the TFBGA package fits space-constrained line cards.
おすすめ
Industrial Automation
The NT5CB256M16CP-EK is ideal for industrial controllers and PLCs that require reliable memory in wide temperature ranges. Its industrial grade supports -40°C to +95°C, ensuring operation in factory floors. The 4Gb density provides ample storage for control algorithms and data logging. The low-voltage operation reduces heat generation, and the 96-ball TFBGA package withstands vibration. With DDR3-2133 speed, it handles real-time data processing efficiently.
おすすめ
Automotive Infotainment
For automotive infotainment systems, the NT5CB256M16CP-EK offers high-bandwidth memory for navigation, multimedia, and instrument clusters. Its automotive temperature grade (-40°C to +95°C) meets AEC-Q100 requirements. The 1.35V supply reduces power in vehicles, and the 256M x 16 organization supports high-resolution displays. The 8 banks enable smooth multitasking, and the TFBGA package is robust for automotive environments.
おすすめ
Consumer Electronics
In high-end consumer devices like smart TVs and gaming consoles, the NT5CB256M16CP-EK provides fast, low-power memory for smooth graphics and multitasking. Its DDR3-2133 speed ensures responsive performance, while the 1.35V operation extends battery life in portable devices. The 16-bit bus is ideal for media processors, and the compact TFBGA package fits slim designs. The commercial temperature grade is sufficient for consumer environments.
おすすめ
Test and Measurement
The NT5CB256M16CP-EK is used in oscilloscopes and signal analyzers for high-speed data acquisition and processing. Its DDR3-2133 bandwidth supports fast sampling rates, and the 4Gb density stores large waveforms. The low-voltage operation reduces noise, and the 8 banks enable efficient data streaming. The industrial temperature grade ensures accuracy in lab and field environments. The TFBGA package allows dense memory arrays on test equipment PCBs.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: NT5CB256M16CP-EK — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | NT5CB256M16CP-DI | NT5CB256M16DP-EK | MT41K256M16TW-107 |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | DDR3-2133 | DDR3-2133 | DDR3-1866 | DDR3-2133 |
| Temperature Grade | Commercial/Industrial/Automotive | Industrial | Commercial | Commercial/Industrial |
| CAS Latency | 9-14 | 9-14 | 9-13 | 9-14 |
主な差別化要因
- Automotive temperature grade available （vs NT5CB256M16CP-DI)
- Higher data rate than some alternatives （vs NT5CB256M16DP-EK)
- Low-voltage operation （vs MT41K256M16TW-107)
設計ノート
For DDR3L routing, maintain 40-50 ohm single-ended impedance and 80-100 ohm differential impedance for DQS and CK signals. Match trace lengths within +/- 50 mils for data and address/control groups. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Reference the Nanya layout guidelines in the datasheet for optimal signal integrity.
The NT5CB256M16CP-EK requires a clean 1.35V supply. Use a low-noise LDO or DC-DC converter with sufficient current capability (typically 1-2A for 4Gb). Add bulk capacitance (10uF) and high-frequency decoupling (0.1uF) at the memory power pins. Ensure VDD and VDDQ are properly decoupled to minimize voltage droop during switching.
The TFBGA package has a thermal resistance of approximately 20-30 C/W (theta_JA). For industrial applications at 95°C case temperature, ensure adequate airflow or a heatsink if the memory is heavily accessed. The low 1.35V operation reduces power dissipation, but sustained high-speed operation can generate significant heat. Monitor junction temperature to stay within the specified range.
コンプライアンス情報
RoHS and REACH compliant per distributor data. AEC-Q100 not applicable for DRAM; automotive grade is based on temperature range.
