NT5CC256M16CP-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya Technology
MPN: NT5CC256M16CP-EK ✓ Hoạt độngNT5CC256M16CP-EK Tóm tắt
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DRAM memory hierarchy, which includes SRAM, DRAM, and flash memory, and is widely used in main memory, graphics, and embedded applications.
Key features include a 4Gb density, 256M x 16 organization, 96-ball TFBGA package, and support for both DDR3 and DDR3L operation. The device operates over a temperature range of 0°C to +95°C (TC) and includes features such as auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination, and ZQ calibration. These features enhance signal integrity and system reliability.
The NT5CC256M16CP-EK uses an 8n-prefetch architecture with 8 internal memory banks, differential clock inputs (CK, CK#), and programmable CAS latency (CL), write latency (CWL), and additive latency. It supports burst lengths of 8 and 4 with burst chop, and includes on-die termination (ODT) for improved signal quality. The device is RoHS compliant and lead-free.
Typical applications include servers, networking equipment, industrial computing, automotive infotainment, and consumer electronics such as set-top boxes and smart TVs. Its low-voltage operation makes it ideal for power-sensitive designs, while its high-speed interface supports demanding data-intensive workloads.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for proper impedance calibration.
Bộ thay thế dễ dàng lắp đặt cho NT5CC256M16CP-EK — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với NT5CC256M16CP-EK (cùng hình factor và footprint) — khác nhau ở Package, Supply Voltage, Data Rate, Density, Operating Temperature.
NT5CC256M16ER-EK
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →NT5CC256M16DP-EK
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
NT5CC256M16EP-EK
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
MT41K256M16HA-125
✅ Drop-In ⚠️ Thông số chưa được xác minh✗ Hết hàng
$6.3636 / Đơn vị
Xem tài liệu →K4B4G1646E-BYMA
✅ Drop-In ⚠️ Thông số chưa được xác minh✗ Hết hàng
$14.3182 / Đơn vị
Xem tài liệu →NT5CC256M16CP-EK Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR3L SDRAM |
| Density | 4Gb |
| Tổ chức | 256M x 16 |
| Điện áp cung cấp | 1.35V (DDR3L) / 1.5V (DDR3) |
| Tốc độ dữ liệu | 2133 Mb/s per pin |
| Hộp | 96-ball TFBGA |
| Nhiệt độ hoạt động | 0°C to +95°C (TC) |
| Number of Banks | 8 |
| Refresh Cycles | 8192 |
| CAS Latency (CL) | Programmable (e.g., 9, 10, 11, 12, 13) |
| Write Latency (CWL) | 5, 6, 7, 8, 9 |
| Burst Length | 8 and 4 (with burst chop) |
| Giao diện | Differential clock (CK, CK#) |
| RoHS | Compliant |
| Lead-Free | Yes |
Cấu hình chân NT5CC256M16CP-EK
| Chân A1 | VDD — Power supply (1.35V/1.5V) |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân A4 | VSS — Ground |
| Chân A5 | DQ2 — Data input/output 2 |
| Chân A6 | DQ3 — Data input/output 3 |
| Chân A7 | VDD — Power supply |
| Chân A8 | DQ4 — Data input/output 4 |
| Chân A9 | DQ5 — Data input/output 5 |
| Chân A10 | VSS — Ground |
| Chân A11 | DQ6 — Data input/output 6 |
| Chân A12 | DQ7 — Data input/output 7 |
| Chân B1 | VSS — Ground |
| Chân B2 | DQ8 — Data input/output 8 |
| Chân B3 | DQ9 — Data input/output 9 |
| Chân B4 | VDD — Power supply |
| Chân B5 | DQ10 — Data input/output 10 |
| Chân B6 | DQ11 — Data input/output 11 |
| Chân B7 | VSS — Ground |
| Chân B8 | DQ12 — Data input/output 12 |
| Chân B9 | DQ13 — Data input/output 13 |
| Chân B10 | VDD — Power supply |
| Chân B11 | DQ14 — Data input/output 14 |
| Chân B12 | DQ15 — Data input/output 15 |
| Chân C1 | VDDQ — DQ power supply |
| Chân C2 | VSSQ — DQ ground |
| Chân C3 | VDDQ — DQ power supply |
| Chân C4 | VSSQ — DQ ground |
| Chân C5 | VDDQ — DQ power supply |
| Chân C6 | VSSQ — DQ ground |
| Chân C7 | VDDQ — DQ power supply |
| Chân C8 | VSSQ — DQ ground |
| Chân C9 | VDDQ — DQ power supply |
| Chân C10 | VSSQ — DQ ground |
| Chân C11 | VDDQ — DQ power supply |
| Chân C12 | VSSQ — DQ ground |
| Chân D1 | A0 — Address input 0 |
| Chân D2 | A1 — Address input 1 |
| Chân D3 | A2 — Address input 2 |
| Chân D4 | A3 — Address input 3 |
| Chân D5 | A4 — Address input 4 |
| Chân D6 | A5 — Address input 5 |
| Chân D7 | A6 — Address input 6 |
| Chân D8 | A7 — Address input 7 |
| Chân D9 | A8 — Address input 8 |
| Chân D10 | A9 — Address input 9 |
| Chân D11 | A10/AP — Address input 10 / Auto-precharge |
| Chân D12 | A11 — Address input 11 |
| Chân E1 | A12 — Address input 12 |
| Chân E2 | A13 — Address input 13 |
| Chân E3 | A14 — Address input 14 |
| Chân E4 | A15 — Address input 15 |
| Chân E5 | BA0 — Bank address 0 |
| Chân E6 | BA1 — Bank address 1 |
| Chân E7 | BA2 — Bank address 2 |
| Chân E8 | RAS# — Row address strobe |
| Chân E9 | CAS# — Column address strobe |
| Chân E10 | WE# — Write enable |
| Chân E11 | CS# — Chip select |
| Chân E12 | CKE — Clock enable |
| Chân F1 | ODT — On-die termination |
| Chân F2 | CK — Clock (positive) |
| Chân F3 | CK# — Clock (negative) |
| Chân F4 | VDD — Power supply |
| Chân F5 | VSS — Ground |
| Chân F6 | VDD — Power supply |
| Chân F7 | VSS — Ground |
| Chân F8 | VDD — Power supply |
| Chân F9 | VSS — Ground |
| Chân F10 | VDD — Power supply |
| Chân F11 | VSS — Ground |
| Chân F12 | VDD — Power supply |
| Chân G1 | DM0 — Data mask 0 |
| Chân G2 | DM1 — Data mask 1 |
| Chân G3 | DM2 — Data mask 2 |
| Chân G4 | DM3 — Data mask 3 |
| Chân G5 | VSS — Ground |
| Chân G6 | VDD — Power supply |
| Chân G7 | VSS — Ground |
| Chân G8 | VDD — Power supply |
| Chân G9 | VSS — Ground |
| Chân G10 | VDD — Power supply |
| Chân G11 | VSS — Ground |
| Chân G12 | VDD — Power supply |
| Chân H1 | DQS0 — Data strobe 0 (positive) |
| Chân H2 | DQS0# — Data strobe 0 (negative) |
| Chân H3 | DQS1 — Data strobe 1 (positive) |
| Chân H4 | DQS1# — Data strobe 1 (negative) |
| Chân H5 | DQS2 — Data strobe 2 (positive) |
| Chân H6 | DQS2# — Data strobe 2 (negative) |
| Chân H7 | DQS3 — Data strobe 3 (positive) |
| Chân H8 | DQS3# — Data strobe 3 (negative) |
| Chân H9 | VSS — Ground |
| Chân H10 | VDD — Power supply |
| Chân H11 | VSS — Ground |
| Chân H12 | VDD — Power supply |
| Chân J1 | RESET# — Asynchronous reset |
| Chân J2 | TDQS — Termination data strobe |
| Chân J3 | TDQS# — Termination data strobe (negative) |
| Chân J4 | ZQ — ZQ calibration |
| Chân J5 | VDD — Power supply |
| Chân J6 | VSS — Ground |
| Chân J7 | VDD — Power supply |
| Chân J8 | VSS — Ground |
| Chân J9 | VDD — Power supply |
| Chân J10 | VSS — Ground |
| Chân J11 | VDD — Power supply |
| Chân J12 | VSS — Ground |
Ứng dụng tiêu biểu
NT5CC256M16CP-EK phù hợp cho 6 Áp dụngs: Server Memory, Networking Equipment, Industrial Computing, Automotive Infotainment, Consumer Electronics, Embedded Systems.
Server Memory
The NT5CC256M16CP-EK provides high-density, low-power memory for server applications. Its 4Gb density and 2133 Mb/s data rate support demanding workloads, while DDR3L operation reduces power consumption in data centers. The 96-ball TFBGA package enables compact module designs, and features like ECC support (if available) enhance reliability. When used in registered DIMMs, it pairs with a register clock driver (RCD) to buffer address and control signals, ensuring signal integrity at high speeds. The low voltage also reduces thermal load, improving system cooling efficiency.
Được đề xuất
Networking Equipment
In networking equipment such as routers and switches, the NT5CC256M16CP-EK provides fast, low-power memory for packet buffering and routing tables. Its high data rate (2133 Mb/s) ensures low latency, while DDR3L voltage reduces power in always-on network devices. The device's on-die termination (ODT) and write leveling features improve signal integrity on high-speed buses, critical for reliable data transmission. It can be used in conjunction with a network processor or FPGA to handle data plane tasks. The 96-ball TFBGA package allows for dense PCB layouts, saving board space in compact networking hardware.
Được đề xuất
Industrial Computing
The NT5CC256M16CP-EK is suitable for industrial PCs and embedded systems that require reliable operation over extended temperature ranges (0°C to +95°C). Its low power consumption is beneficial for fanless designs, and the high data rate supports real-time data processing. The device's auto self-refresh and ZQ calibration features ensure stable operation in varying thermal conditions. It can be paired with an industrial-grade processor or FPGA for applications like machine vision and process control. The 96-ball TFBGA package provides robust solder joints for vibration-prone environments.
Được đề xuất
Automotive Infotainment
In automotive infotainment systems, the NT5CC256M16CP-EK provides high-bandwidth memory for navigation, multimedia, and instrument cluster displays. Its DDR3L operation reduces power consumption, which is critical in vehicles. The device supports a wide temperature range, making it suitable for cabin environments. Features like write leveling and dynamic ODT ensure reliable operation in noisy automotive electrical environments. It can be used with an automotive-grade application processor or SoC. The 96-ball TFBGA package is compact, fitting into space-constrained head units.
Được đề xuất
Consumer Electronics
The NT5CC256M16CP-EK is used in consumer devices like set-top boxes, smart TVs, and gaming consoles. Its high data rate enables smooth video streaming and responsive user interfaces, while DDR3L voltage reduces power consumption in always-on devices. The device's small TFBGA package allows for slim product designs. It can be paired with a media processor or SoC for video decoding and rendering. Features like auto precharge and burst chop improve memory efficiency, reducing latency in real-time applications.
Được đề xuất
Embedded Systems
For general embedded systems, the NT5CC256M16CP-EK offers a balance of performance and power efficiency. Its 4Gb density is suitable for applications requiring large memory footprints, such as data logging and complex algorithms. The device's low voltage and wide temperature range make it versatile for various environments. It can be interfaced with a wide range of microcontrollers and FPGAs that support DDR3L. The 96-ball TFBGA package is easy to route on multi-layer PCBs. Features like on-die termination simplify PCB design by reducing the need for external termination resistors.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho NT5CC256M16CP-EK — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | NT5CC256M16ER-EK | NT5CC256M16DP-EK | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V (DDR3L) | 1.35V (DDR3L) | 1.35V (DDR3L) | 1.35V (DDR3L) |
| Data Rate | 2133 Mb/s | 2133 Mb/s | 2133 Mb/s | 2133 Mb/s |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Number of Banks | 8 | 8 | 8 | 8 |
Bảo phân biệt quan trọng
- Low-voltage DDR3L operation (vsStandard DDR3 parts)
- Wide temperature range (vsCommercial-only DDR3L parts)
- High data rate (vsOlder DDR3L parts with lower speed grades)
Ghi chú thiết kế
For high-speed DDR3L signals, maintain controlled impedance of 40-60 ohms for data lines and 50-75 ohms for address/control lines. Keep trace lengths matched within +/- 50 mils for DQ/DQS groups. Use a solid ground plane beneath the memory device and minimize vias on high-speed traces. Refer to the Nanya layout guidelines in the datasheet for specific recommendations.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close to the balls as possible. Use a 10uF bulk capacitor per power rail. The ZQ pin requires a 240-ohm +/- 1% resistor to ground for impedance calibration. Ensure the VREF voltage is clean and properly bypassed.
The NT5CC256M16CP-EK operates up to +95°C TC. For high-density systems, ensure adequate airflow or heatsinking to keep the case temperature within limits. The 96-ball TFBGA package has a thermal resistance that depends on PCB copper area; use thermal vias under the package to improve heat dissipation.
Thông tin tuân thủ
RoHS compliant and lead-free per datasheet and distributor listings. AEC-Q100 not specified for this part number; automotive grade may require specific suffix.
