NT5CB256M16CP-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya
Référence : NT5CB256M16CP-EK ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.4 | $3 200,00 |
| 1 000 | $5.9 | $5 900,00 |
NT5CB256M16CP-EK Présentation
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile, embedded, and industrial systems where power efficiency is critical, and it is backward compatible with DDR3 through its support for both 1.35V and 1.5V operation.
Key features include a 4Gb density, 256M x 16 organization, 96-ball TFBGA package, and support for data rates up to 2133 Mbps. The device operates from a 1.35V supply (1.425V to 1.575V range) and features programmable CAS Latency (CL) of 9, 10, 11, 12, 13, and 14, and WRITE Latency (CWL) of 5, 6, 7, 8, and 9. It also supports on-die termination (ODT), dynamic ODT, and programmable output driver impedance. The industrial and automotive temperature grades ensure reliable operation from -40°C to +95°C (case temperature).
Technically, the NT5CB256M16CP uses a 30nm-class DRAM process, enabling high density with low power. The device includes 8 internal banks (BA0-BA2) for efficient interleaving and reduced row activation overhead. Differential clock inputs (CK, CK#) improve signal integrity, and the programmable additive latency (AL) supports posted CAS operations for improved bus efficiency. The device also features auto refresh and self refresh modes, with a typical refresh period of 7.8us at 85°C and 3.9us at 95°C.
Typical applications include embedded computing, networking equipment, industrial automation, automotive infotainment and ADAS, and high-performance consumer electronics. The 256M x 16 organization is well-suited for systems requiring a 16-bit memory bus, such as SoCs and FPGAs with wide memory interfaces. The low-voltage operation makes it ideal for battery-powered and thermally constrained designs.
When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the PCB layout guidelines for DDR3 routing, including matched trace lengths and impedance control (typically 40-50 ohms). The VREFCA and VREFDQ should be decoupled with 0.1uF capacitors to ground.
Alternatives de remplacement direct pour NT5CB256M16CP-EK — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5CB256M16CP-EK (même facteur de forme et même empreinte) — différant par Package, Supply Voltage, Data Rate, Operating Temperature, CAS Latency (CL).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5CB256M16CP-DI
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →NT5CB256M16DP-EK
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NT5CC256M16CP-EK
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$22 / unité
Voir la fiche technique →MT41K256M16TW-107
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.1 / unité
Voir la fiche technique →K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →NT5CB256M16CP-EK Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4Gb |
| Organisation de la mémoire | 256M x 16 |
| Tension d'alimentation | 1.35V (1.425V to 1.575V) |
| Débit de données | DDR3-2133 (CL14) |
| CAS Latency (CL) | 9, 10, 11, 12, 13, 14 |
| WRITE Latency (CWL) | 5, 6, 7, 8, 9 |
| Posted CAS Additive Latency | Programmable |
| Internal Banks | 8 (BA0-BA2) |
| Boîtier | 96-ball TFBGA |
| Température de fonctionnement | Commercial: 0C to +95C; Industrial: -40C to +95C; Automotive: -40C to +95C |
| RoHS | Compliant |
| REACH | Compliant |
| Lead-Free | Yes |
| Type de montage | Surface Mount |
Configuration des broches de NT5CB256M16CP-EK
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche B1 | DQ2 — Data input/output 2 |
| Broche B2 | DQ3 — Data input/output 3 |
| Broche B3 | VDDQ — DQ power supply |
| Broche C1 | DQ4 — Data input/output 4 |
| Broche C2 | DQ5 — Data input/output 5 |
| Broche C3 | VSSQ — DQ ground |
| Broche D1 | DQ6 — Data input/output 6 |
| Broche D2 | DQ7 — Data input/output 7 |
| Broche D3 | VDD — Power supply |
| Broche E1 | DM0 — Data mask 0 |
| Broche E2 | DQS0 — Data strobe 0 |
| Broche E3 | DQS0# — Data strobe 0 complement |
Applications typiques
NT5CB256M16CP-EK convient pour 6 applications: Embedded Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Consumer Electronics, Test and Measurement.
Embedded Computing
The NT5CB256M16CP-EK provides high-density, low-power memory for embedded processors and SoCs. Its 256M x 16 organization matches wide memory buses, and the 1.35V operation reduces power in thermally constrained designs. With data rates up to DDR3-2133, it supports high-bandwidth applications like industrial PCs and edge computing. The 96-ball TFBGA package enables compact PCB layouts, and the industrial temperature grade ensures reliability in harsh environments.
Recommandé
Networking Equipment
In networking switches and routers, the NT5CB256M16CP-EK provides fast, reliable memory for packet buffering and routing tables. Its DDR3-2133 data rate and 16-bit bus deliver high throughput, while the low 1.35V supply reduces power in 24/7 operation. The 8 internal banks enable efficient interleaving, minimizing latency. The commercial temperature grade is suitable for standard networking environments, and the TFBGA package fits space-constrained line cards.
Recommandé
Industrial Automation
The NT5CB256M16CP-EK is ideal for industrial controllers and PLCs that require reliable memory in wide temperature ranges. Its industrial grade supports -40°C to +95°C, ensuring operation in factory floors. The 4Gb density provides ample storage for control algorithms and data logging. The low-voltage operation reduces heat generation, and the 96-ball TFBGA package withstands vibration. With DDR3-2133 speed, it handles real-time data processing efficiently.
Recommandé
Automotive Infotainment
For automotive infotainment systems, the NT5CB256M16CP-EK offers high-bandwidth memory for navigation, multimedia, and instrument clusters. Its automotive temperature grade (-40°C to +95°C) meets AEC-Q100 requirements. The 1.35V supply reduces power in vehicles, and the 256M x 16 organization supports high-resolution displays. The 8 banks enable smooth multitasking, and the TFBGA package is robust for automotive environments.
Recommandé
Consumer Electronics
In high-end consumer devices like smart TVs and gaming consoles, the NT5CB256M16CP-EK provides fast, low-power memory for smooth graphics and multitasking. Its DDR3-2133 speed ensures responsive performance, while the 1.35V operation extends battery life in portable devices. The 16-bit bus is ideal for media processors, and the compact TFBGA package fits slim designs. The commercial temperature grade is sufficient for consumer environments.
Recommandé
Test and Measurement
The NT5CB256M16CP-EK is used in oscilloscopes and signal analyzers for high-speed data acquisition and processing. Its DDR3-2133 bandwidth supports fast sampling rates, and the 4Gb density stores large waveforms. The low-voltage operation reduces noise, and the 8 banks enable efficient data streaming. The industrial temperature grade ensures accuracy in lab and field environments. The TFBGA package allows dense memory arrays on test equipment PCBs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5CB256M16CP-EK — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5CB256M16CP-DI | NT5CB256M16DP-EK | MT41K256M16TW-107 |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | DDR3-2133 | DDR3-2133 | DDR3-1866 | DDR3-2133 |
| Temperature Grade | Commercial/Industrial/Automotive | Industrial | Commercial | Commercial/Industrial |
| CAS Latency | 9-14 | 9-14 | 9-13 | 9-14 |
Principaux différenciateurs
- Automotive temperature grade available (vs NT5CB256M16CP-DI)
- Higher data rate than some alternatives (vs NT5CB256M16DP-EK)
- Low-voltage operation (vs MT41K256M16TW-107)
Notes de conception
For DDR3L routing, maintain 40-50 ohm single-ended impedance and 80-100 ohm differential impedance for DQS and CK signals. Match trace lengths within +/- 50 mils for data and address/control groups. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Reference the Nanya layout guidelines in the datasheet for optimal signal integrity.
The NT5CB256M16CP-EK requires a clean 1.35V supply. Use a low-noise LDO or DC-DC converter with sufficient current capability (typically 1-2A for 4Gb). Add bulk capacitance (10uF) and high-frequency decoupling (0.1uF) at the memory power pins. Ensure VDD and VDDQ are properly decoupled to minimize voltage droop during switching.
The TFBGA package has a thermal resistance of approximately 20-30 C/W (theta_JA). For industrial applications at 95°C case temperature, ensure adequate airflow or a heatsink if the memory is heavily accessed. The low 1.35V operation reduces power dissipation, but sustained high-speed operation can generate significant heat. Monitor junction temperature to stay within the specified range.
Informations de conformité
RoHS and REACH compliant per distributor data. AEC-Q100 not applicable for DRAM; automotive grade is based on temperature range.
