1EDN8511BXUSA1 vs 1ED3323MC12NXUMA1 比較

詳細並排比較 1EDN8511BXUSA1 由 Infineon 與 1ED3323MC12NXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1EDN8511BXUSA1 1EDN8511BXUSA1 - 1-Ch 4A/8A Low-Side Gate Driver | Infineon

1EDN8511BXUSA1 - 1-Ch 4A/8A Low-Side Gate Driver | Infineon

1EDN8511BXUSA1 ✓ 啟用中
Infineon
1ED3323MC12NXUMA1 1ED3323MC12NXUMA1 - 5.7kV Isolated Gate Driver | Infineon

1ED3323MC12NXUMA1 - 5.7kV Isolated Gate Driver | Infineon

1ED3323MC12NXUMA1 ✓ 啟用中

規格比較

參數 1EDN8511BXUSA1 1ED3323MC12NXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Channel Count 1 —
Driver Configuration Low-side —
Peak Source Current 4 A 8.5 A
Peak Sink Current 8 A 9 A
Input Stage Inverting and non-inverting —
Propagation Delay Accuracy [DATA_NEEDED: typical propagation delay] —
UVLO Threshold 8 V —
Driver Supply Voltage (VCC) [DATA_NEEDED: VCC range upper limit] —
工作接面溫度 -40 °C to +150 °C —
封裝 PG-SOT23-6-2 PG-DSO-16-40
安裝類型 Surface Mount Surface Mount
腳位數 6 —
Logic Input Compatibility TTL / CMOS —
Target Switch Type Power MOSFET, GaN HEMT —
RoHS 狀態 Compliant Compliant
MSL 等級 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
功能 — Single-channel isolated gate driver
Isolation Voltage (Vrms) — 5.7 kVrms
Number of Channels — 1
Primary-Side Supply Voltage (VDD1) — 3.1 V to 5.5 V
Secondary-Side Supply Voltage (VCC2) — 9 V to 18 V
Propagation Delay (typ) — 85 ns
Common-Mode Transient Immunity (CMTI) — [DATA_NEEDED: CMTI in kV/us]
Protection Features — DESAT short-circuit, soft-off, Miller clamp, UVLO
工作溫度範圍 — -40 C to +125 C
Family — EiceDRIVER F3 Enhanced (1ED332x)
Isolation Technology — Coreless Transformer (CT)

資料表與資源

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