2EDL6014ACG2DXTMA1 vs 1ED3124MC12HXUMA1 比較

詳細並排比較 2EDL6014ACG2DXTMA1 由 Infineon 與 1ED3124MC12HXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 啟用中

規格比較

參數 2EDL6014ACG2DXTMA1 1ED3124MC12HXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Type Half-Bridge Gate Driver —
Number of Channels 2 (high-side + low-side) —
輸出配置 Non-Inverting —
High-Side Voltage Rating 120 V —
Source Output Current 4 A —
Sink Output Current 6 A —
Supply Voltage (VDD) 2.97 V to 5.5 V —
Rise Time (typ.) 4.2 ns —
Fall Time (typ.) 3.8 ns —
工作溫度 -40 C to +125 C -40 C to +125 C
封裝 11-WQFN (2.2 x 2.2 mm) with exposed pad PG-DSO-8 (DSO-8)
Packing Method Tape & Reel —
Isolation Type Isolated (level-shifted floating high-side) —
安裝類型 Surface Mount Surface Mount
Technology Family EiceDRIVER 2EDL —
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Number of Drivers — 1
輸出數量 — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
上升時間 — 15 ns
下降時間 — 30 ns
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET
RoHS 狀態 — Compliant

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