2EDN8533RXTMA1 vs 2EDL6014ACG2DXTMA1 比較

詳細並排比較 2EDN8533RXTMA1 由 Infineon 與 2EDL6014ACG2DXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2EDN8533RXTMA1 2EDN8533RXTMA1 - Dual 5A Low-Side Gate Driver IC | Infineon

2EDN8533RXTMA1 - Dual 5A Low-Side Gate Driver IC | Infineon

2EDN8533RXTMA1 ✓ 啟用中

規格比較

參數 2EDN8533RXTMA1 2EDL6014ACG2DXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Dual-channel low-side gate driver IC —
Driver Configuration Low-side, dual independent channels —
Peak Source/Sink Current 5 A per channel —
Number of Channels 2 2 (high-side + low-side)
Input Compatibility LV-TTL —
Input Voltage Tolerance (absolute max) -12 V to +22 V —
Supply Voltage (VCC) [DATA_NEEDED: VCC operating range] —
Output Resistance Low (per datasheet; see SG figure) —
Propagation Delay Matched between channels (excellent timing accuracy) —
Under-Voltage Lockout (UVLO) Yes (VCC UVLO) —
封裝 PG-TSSOP-8 (exposed pad) 11-WQFN (2.2 x 2.2 mm) with exposed pad
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: operating temperature] —
MSL 等級 [DATA_NEEDED: MSL rating] —
RoHS 狀態 Compliant (per Infineon product page) —
Driver Type — Half-Bridge Gate Driver
輸出配置 — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
工作溫度 — -40 C to +125 C
Packing Method — Tape & Reel
Isolation Type — Isolated (level-shifted floating high-side)
Technology Family — EiceDRIVER 2EDL

資料表與資源

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