BSD235CH6327XTSA1 vs BSZ15DC02KDHXTMA1 比較

詳細並排比較 BSD235CH6327XTSA1 由 Infineon 與 BSZ15DC02KDHXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSZ15DC02KDHXTMA1 BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 ✓ 啟用中

規格比較

參數 BSD235CH6327XTSA1 BSZ15DC02KDHXTMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET Common drain (back-to-back source pair)
Drain-to-Source Voltage (VDS) 20 V —
N-Channel Continuous Drain Current (ID) 950 mA 5.1 A
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) 3.2 A
Total Power Dissipation (Ptot) 500 mW —
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
安裝類型 Surface Mount Surface Mount
Technology OptiMOS™ low-voltage OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch)
工作溫度範圍 -55 °C to +150 °C (junction) —
Polarity N-channel + P-channel —
Channel Mode Enhancement —
RoHS 狀態 Compliant (lead-free) —
MSL 等級 1 —
腳位數 6 —
Part Number — BSZ15DC02KDHXTMA1
電晶體類型 — N-Channel + P-Channel (complementary pair)
Drain-to-Source Voltage (VDS) Max — 20 V
N-Channel RDS(on) Max — [DATA_NEEDED: N-ch RDS(on) value in mohm]
P-Channel RDS(on) Max — 55 mOhm (per Infineon part summary)
Gate Drive Level — Super Logic level, 2.5 V rated
Total Package Power Dissipation (PD) — 2.5 W @ 25 C (per DigiKey listing)
工作接面溫度 — -55 C to +175 C
封裝 — PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad)
Avalanche Rated — Yes
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes / RoHS compliant

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