BSS169H6327XTSA1 vs 2N7002L 比較
詳細並排比較 BSS169H6327XTSA1 由 Infineon 與 2N7002L 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS169H6327XTSA1 | 2N7002L |
|---|---|---|
| 品牌 | Infineon | onsemi |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel Depletion Mode | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 170 mA (Ta) | 115 mA (Ta) |
| Power Dissipation (PD) | 360 mW (Ta) | 200 mW (Ta), 225 mW max |
| RDS(on) Maximum | 6 Ohm at VGS=0 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | Pinch-off approx. -3.5 V (typical) | 1 V to 2.5 V |
| 工作溫度範圍 | [DATA_NEEDED: junction/ambient operating temperature range] | — |
| 封裝 | PG-SOT23 (SOT-23-3) | SOT-23 (SOT-23-3) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Technology | Depletion-mode vertical DMOS | High cell density trench MOSFET |
| Drain Current at 25C | 170 mA continuous | — |
| Typical RDS(on) | [DATA_NEEDED: typical RDS(on) value] | — |
| 電晶體類型 | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| On-State Resistance (RDS(on)) | — | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Configuration | — | Single FET |
| Switching Performance | — | Fast switching, rugged and reliable |
| Gate Drive | — | 5V logic-level enhancement mode |
| Typical Applications | — | Low-side switching, servo motor control, gate driving, logic-level shifting |
| Manufacturer | — | onsemi |