H5AN4G8NBJR-UHC vs H5AN4G8NBJR-RDC 比較
詳細並排比較 H5AN4G8NBJR-UHC 由 SK hynix 與 H5AN4G8NBJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN4G8NBJR-UHC | H5AN4G8NBJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| 組織 | 512M x 8 | 512M x 8 |
| 資料速率 | 2400 Mbps (PC2400) | [DATA_NEEDED: speed grade Mbps] |
| 供應電壓 | 1.2 V | [DATA_NEEDED: VDD supply voltage] |
| 介面 | DDR4 (JEDEC) | DDR4 (Double Data Rate IV) |
| 封裝 | TFBGA-78 (11 x 7.5 mm) | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Lifecycle Code | Active | — |
| RoHS 狀態 | Compliant (Rohs Code: Yes) | Lead-Free & Halogen-Free (RoHS Compliant) |
| REACH Compliance | Compliant | — |
| Manufacturer | SK Hynix Inc. | SK hynix |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | — |
| CAS 延遲 | [DATA_NEEDED: CAS latency for -UHC speed bin] | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x/4x support] | Auto-refresh and self-refresh |
| Bank Architecture | — | 8 banks with 4 bank groups (x8) |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Termination | — | On-Die Termination (ODT) |
| Process Technology | — | CMOS |
| Family Series | — | H5AN4G4/8/6NBJR |