H5TC4G63AFR-G7A vs H5TC4G63AFR-PBR 比較

詳細並排比較 H5TC4G63AFR-G7A 由 SK hynix 與 H5TC4G63AFR-PBR 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5TC4G63AFR-G7A H5TC4G63AFR-G7A - 4Gb DDR3L SDRAM 1.35V | SK Hynix

H5TC4G63AFR-G7A - 4Gb DDR3L SDRAM 1.35V | SK Hynix

H5TC4G63AFR-G7A ✓ 啟用中
SK hynix
H5TC4G63AFR-PBR H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBR ✓ 啟用中

規格比較

參數 H5TC4G63AFR-G7A H5TC4G63AFR-PBR
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
單價 (USD) — $5.91
記憶體類型 DDR3L SDRAM DDR3L SDRAM
Density 4Gb —
組織 256M x 16 256M x 16
供應電壓 1.35V 1.35V (1.5V compatible)
資料速率 1600 Mbps (PC3-12800) 1600 Mbps (PC3L-12800)
封裝 96-ball FBGA 96-ball FBGA (PBGA96)
工作溫度 0°C to 95°C (case) 0C to +95C
CAS 延遲 Programmable (e.g., 11) 11
Burst Length 8 and 4 8 (BL8) with burst chop (BC4)
Refresh Period 7.8us at 85°C —
On-Die Termination Supported —
RoHS Compliant Compliant
Lead-Free Yes Yes
無鹵素 Yes Yes
Process Technology CMOS —
Total Capacity — 4Gb
tRCD/tRP — 11
Clock Frequency — 800 MHz
tCK — 1.25 ns
tRCD — 13.125 ns
Number of Banks — 8
Refresh Interval — 7.8us at 85C, 3.9us at 95C
Package Dimensions — 13.5mm x 9.0mm
Ball Pitch — 0.8mm
I/O Interface — SSTL-15

資料表與資源

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