K4RCH046VM-2CCM vs K4RHE165VB-BCWM 比較
詳細並排比較 K4RCH046VM-2CCM 由 Samsung Electronics 與 K4RHE165VB-BCWM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4RCH046VM-2CCM | K4RHE165VB-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | NRND | 啟用中 |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 32 Gb | 24 Gb |
| 組織 | 4G x 4 | 1G x 16 |
| 資料速率 | 5600 Mbps | 5600 Mbps |
| 供應電壓 | 1.1 V | 1.1 V |
| 工作溫度 | 0 to 85 C | 0 C to +85 C |
| 封裝 | 78-ball FBGA | 106 FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Product Status | Sample | Mass Production |
| Access Latency (CL) | [DATA_NEEDED: CAS latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh rate] | — |
| 介面類型 | [DATA_NEEDED: interface type] | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| On-Die ECC | [DATA_NEEDED: on-die ECC support] | — |
| 介面 | — | Parallel, DDR5 |
| Generation | — | DDR5 |
| Application Segment | — | DDR5 memory modules and HPC systems |
| Speed Grade Suffix | — | BCWM |
| tCK (Clock Period) | — | [DATA_NEEDED: clock period] |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency] |